IXTP 1R6N50P
IXTY 1R6N50P
Symbol
gfs
TestConditions
Characteristic Values
TO-252 AA Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
0.7
1.4
S
Ciss
Coss
Crss
140
20
pF
pF
pF
2.6
td(on)
tr
td(off)
tf
10
16
25
16
ns
ns
ns
ns
Dim. Millimeter
Min. Max.
Inches
Min.
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
Max.
RG = 20 Ω (External)
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
A2
b
0
0.64
0.13
0.89
0
0.005
0.035
0.025
Qg(on)
Qgs
3.9
1.4
1.3
nC
nC
nC
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
Qgd
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
RthJC
2.9 K/W
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
e
e1
2.28BSC
4.57BSC
0.090BSC
0.180BSC
H
L
9.40 10.42
0.370
0.020
0.410
0.040
Source-Drain Diode
Characteristic Values
0.51
1.02
(TJ = 25°C, unless otherwise specified)
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
1.6
A
A
V
ISM
Repetitive
2.5
1.5
TO-220 Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 1.6 A, -di/dt = 100 A/µs
400
ns
VR = 100V
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
