SMD Type
Transistors
Surface Mount PNP Silicon Transistor
KXT5401 (CXT5401)
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
+0.1
1.80
-0.1
Features
High current (max. 500mA).
Low voltage (max. 150 V).
+0.1
0.48
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
1. Base
+0.1
3.00
-0.1
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-160
-150
-5
V
V
Collector current (DC)
power dissipation
-500
1.2
mA
W
PD
thermal resistance Junction- to-ambient
Junction temperature
R
JA
Tj
Tstg
104
150
/W
Storage temperature
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-160
-150
-5.0
Typ
Max
Unit
V
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
VCBO
VCEO
VEBO
IC=-100
IC=-1.0mA
IE=-10
A
V
V
A
VCB =- 120 V, IE = 0
-50
-50
nA
A
Collector cutoff current
ICBO
VCB =- 120 V, TA=100
IC = -1.0 mA; VCE = -5.0 V
IC = -10mA; VCE =- 5.0V
IC = -50 mA; VCE = -5.0V
IC =- 10 mA; IB = -1.0mA
IC = -50 mA; IB = -5.0mA
IC = -10 mA; IB = -1.0mA
IC = -50 mA; IB =- 5.0mA
50
60
50
DC current gain
hFE
240
-0.2
-0.5
-1.0
-1.0
6.0
V
V
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
Output capacitance
Transition frequency
Cob
fT
VCB =-10 V, IE = 0,f=1.0MHz
IC = -10 mA; VCE =-10V; f = 100 MHz
pF
MHz
100
300
1
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