PZTA44/45
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified)
SYMBOL RATINGS
VCBO
PARAMETER
UNIT
V
PZTA44
PZTA45
PZTA44
PZTA45
500
400
Collector-Base Voltage
Collector-Emitter Voltage
V
400
V
VCEO
VEBO
IC
350
V
Emitter-Base Voltage
Collector Current
6
V
300
mA
W
°C
°C
Collector Dissipation
Junction Temperature
Storage Temperature
PC
1.2
TJ
+150
-55 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(TJ =25°C, unless otherwise specified)
SYMBOL TEST CONDITIONS MIN
BVCBO IC=100μA, IB=0
PARAMETER
TYP MAX UNIT
PZTA44
PZTA45
PZTA44
PZTA45
500
400
400
350
6
V
V
V
V
V
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
BVCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=100μA, IC=0
PZTA44
VCB=400V, IE=0
0.1
0.1
0.5
0.5
0.1
μA
μA
μA
μA
μA
Collector Cut-OFF Current
ICBO
PZTA45
PZTA44
PZTA45
VCB=320V, IE=0
VCE=400V, IB=0
ICES
Collector Cut-OFF Current
Emitter Cut-OFF Current
VCE=320V, IB=0
IEBO
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
40
50
45
40
240
DC Current Gain (Note)
hFE
0.4
0.5
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=10mA, IB=1mA
IC=50mA, IB=5mA
V
V
V
0.75
0.75
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VBE(SAT) IC=10mA, IB=1mA
fT
VCE=20V,Ic=10mA, f=100MHz
VCB=20V, IE=0, f=1MHz
50
MHz
pF
COB
7
Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R207-003.C
www.unisonic.com.tw
