请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTK80N25

型号：

IXTK80N25

描述：

大电流场效应管MegaMOSTM[ High Current MegaMOSTM FET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

568 K

下载PDF手册
IXTK 80N25 VDSS = 250 V  
High Current  
MegaMOSTMFET  
ID25  
= 80 A  
RDS(on) = 33 mΩ  
N-Channel Enhancement Mode  
PreliminaryDataSheet  
Symbol  
Testconditions  
Maximum ratings  
TO-264AA(IXTK)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1.0 MΩ  
250  
250  
V
V
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
D (TAB)  
G
ID25  
ID(RMS)  
IDM  
T
= 25°C MOSFET chip capability  
80  
75  
A
ECxternal lead current limit  
A
A
A
D
S
T
= 25°C, pulse width limited by TJM  
320  
80  
IAR  
TCC = 25°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
EAR  
EAS  
T
= 25°C  
60  
2.5  
mJ  
J
TCC = 25°C  
Features  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
5
V/ns  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• International standard package  
• Fast switching times  
PD  
TJ  
TC = 25°C  
540  
W
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
Applications  
TL  
1.6 mm (0.063 in.) from case for 10 s  
Mountingtorque  
300  
0.7/6  
10  
°C  
Nm/lb.in.  
g
• Motor controls  
Md  
• DC choppers  
Weight  
TO-264  
• Switched-mode power supplies  
Advantages  
• Easy to mount with one screw  
(isolated mounting screw hole)  
• Space savings  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
• High power density  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 1 mA  
250  
V
V
VDS = VGS, ID = 250 µA  
VGS = ±20 V DC, VDS = 0  
2.0  
4.0  
±100 nA  
IDSS  
VDS = V  
T = 25°C  
50 µA  
VGS = 0 DVSS  
TJJ = 125°C  
2
mA  
RDS(on)  
VGS = 10 V, I = 0.5 I  
33 mΩ  
Pulse test, t ≤D300 msD,2d5 uty cycle d ≤ 2%  
© 2003 IXYS All rights reserved  
DS98953A(11/03)  
IXTK 80N25  
Symbol  
Test Conditions  
Characteristic values  
Min. Typ. Max.  
TO-264 AA Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
VDS = 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
40  
56  
S
Ciss  
Coss  
Crss  
6000  
1125  
420  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
28  
25  
88  
24  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 1.0 Ω (External)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
0.53  
25.91  
19.81  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
0.83  
26.16  
19.96  
.190  
.202  
.114  
.083  
.056  
.106  
.122  
.033  
1.030  
.786  
Qg(on)  
Qgs  
240  
40  
110  
nC  
nC  
nC  
A1  
.100  
A2  
.079  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
b
.044  
.094  
.114  
.021  
1.020  
.780  
.215BSC  
.000  
.000  
b1  
Qgd  
b2  
c
D
E
e
J
K
RthJC  
RthCK  
0.23 K/W  
K/W  
5.46BSC  
0.00  
0.00  
0.15  
0.25  
0.25  
.010  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Source-Drain Diode  
Ratings and Characteristics  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
80  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
320  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/µs, VR = 100V  
300  
3.0  
ns  
Qrr  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXTK 80N25  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
200  
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
5V  
60  
40  
5V  
20  
0
0
0
0
0.5  
1
1.5  
2
2.5  
0
1
2
3
4
5
6
7
8
9
10  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
1.8  
1.6  
1.4  
1.2  
1
ID = 80A  
ID = 40A  
5V  
0.8  
0.6  
0.4  
1
2
3
4
5
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
0.8  
20 40 60 80 100 120 140 160 180 200  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXTK 80N25  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
TJ = -40ºC  
25ºC  
125ºC  
60  
40  
TJ = 125ºC  
25ºC  
-40ºC  
20  
0
4
0.4  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
0
20  
40  
60  
80  
100 120 140 160  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
200  
180  
160  
140  
120  
100  
80  
VDS = 125V  
ID = 40A  
IG = 10mA  
9
8
7
6
5
4
3
2
1
0
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0.6  
0.8  
1
1.2  
1.4  
0
50  
100  
150  
200  
250  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Forw ard Bias Safe  
Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
f = 1MHz  
TC = 25ºC  
25µs  
C
C
iss  
RDS(on) Limit  
100  
10  
1
1ms  
DC  
oss  
C
rss  
1
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTK 80N25  
Fig. 13. Forw ard Bias e d Safe Ope rating Are a (FBSOA)  
0.24  
0.22  
0.20  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.227478s