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IXTP160N075T

型号：

IXTP160N075T

描述：

初步的技术资料TrenchMVTM功率MOSFET[ Preliminary Technical Information TrenchMVTM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

179 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTA160N075T  
IXTP160N075T  
VDSS = 75  
ID25 = 160  
RDS(on) ≤ 6.0 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
75  
75  
V
V
G
S
D (TAB)  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
160  
75  
430  
A
A
A
TO-220 (IXTP)  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
750  
A
mJ  
D (TAB)  
G
D
S
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175C, RG = 5 Ω  
3
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-3P, TO-220)  
1.13 / 10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
3
2.5  
g
g
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
ꢀ
High power density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
Automotive  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
ꢀ
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
75  
V
V
2.0  
4.0  
- ABS Systems  
ꢀ
DC/DC Converters and Off-line UPS  
± 200  
nA  
ꢀ
Primary Switch for 24V and 48V  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
Systems  
High Current Switching  
Applications  
ꢀ
TJ = 150°C  
250  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
5.1  
6.0 mΩ  
DS99520 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA160N075T  
IXTP160N075T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
65  
100  
S
Ciss  
Coss  
Crss  
4950  
790  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
145  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
29  
64  
60  
60  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
112  
30  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
30  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCH  
0.42 °C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
Symbol  
Test Conditions  
Characteristic Values  
L1  
L2  
L3  
L4  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
160  
A
A
R
0.46  
0.74  
.018  
.029  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
430  
1.0  
TO-220 (IXTP) Outline  
V
IF = 25 A, -di/dt = 100 A/μs  
80  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
PRELIMINARYTECHNICALINFORMATION  
3 - Source 4, TAB - Drain  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTA160N075T  
IXTP160N075T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
280  
240  
200  
160  
120  
80  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
5V  
60  
40  
40  
20  
5V  
0
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
1
2
3
4
5
6
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 80A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 160A  
D
6V  
5V  
I
= 80A  
D
60  
40  
20  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
140  
120  
100  
80  
V
= 10V  
GS  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
15V - - - -  
1.8  
1.6  
1.4  
1.2  
1
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
20  
T = 25ºC  
J
0.8  
0.6  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA160N075T  
IXTP160N075T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
270  
240  
210  
180  
150  
120  
90  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
T
J
= -40ºC  
25ºC  
150ºC  
150ºC  
60  
40  
60  
20  
30  
0
0
0
50  
100  
150  
200  
250  
300  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
270  
240  
210  
180  
150  
120  
90  
V
= 37V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
60  
30  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA160N075T  
IXTP160N075T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
80  
70  
60  
50  
40  
30  
20  
10  
R
= 5  
Ω
G
V
V
= 10V  
GS  
DS  
T = 25ºC  
J
= 38V  
R
V
V
= 5  
Ω
G
= 10V  
GS  
= 38V  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
100  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
62  
85  
82  
79  
76  
73  
70  
67  
64  
61  
58  
55  
t r  
td(on)  
- - - -  
60  
58  
56  
54  
52  
50  
48  
46  
44  
42  
90  
80  
70  
60  
50  
40  
30  
20  
10  
TJ = 125ºC, V = 10V  
GS  
t f  
R
td(off) - - - -  
V
= 38V  
DS  
I
= 25A  
D
= 5 , V = 10V  
Ω
GS  
G
V
= 38V  
DS  
I
= 25A  
D
I
= 50A  
D
I
= 50A  
D
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
42  
90  
86  
82  
78  
74  
70  
66  
62  
58  
54  
50  
130  
120  
110  
100  
90  
230  
210  
190  
170  
150  
130  
110  
90  
t f  
td(off)  
- - - -  
T
= 125ºC  
J
TJ = 125ºC, VGS = 10V  
VDS = 38V  
t f  
R
td(off) - - - -  
= 5 , VGS = 10V  
Ω
I
= 25A  
G
D
T
= 25ºC  
J
VDS = 38V  
I D = 50A  
80  
70  
T
= 25ºC  
J
60  
50  
70  
T
= 125ºC  
40  
J
40  
50  
25  
30  
35  
45  
50  
4
6
8
10  
12  
14  
16  
18  
20  
I D - Amperes  
RG - Ohms  
IXYS REF: T_160N075T__4V__6_16_06.xls  
© 2006 IXYS CORPORATION All rights reserved  
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