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IXTP76N075T

型号：

IXTP76N075T

描述：

初步的技术资料N通道增强模式额定雪崩[ Preliminary Technical Information N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

182 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTA76N075T  
IXTP76N075T  
VDSS = 75  
ID25 = 76  
RDS(on) ≤ 12 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
75  
75  
V
V
G
S
VGSM  
Transient  
± 20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25°C  
76  
75  
210  
A
A
A
Lead Current Limit, RMS  
TO-220 (IXTP)  
TC = 25°C, pulse width limited by TJM  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
10  
500  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 10 Ω  
3
V/ns  
G
(TAB)  
D
S
TC = 25°C  
176  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
3
g
g
2.5  
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
ꢀ
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
- 42V Power Bus  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 50 μA  
VGS = ± 20 V, VDS = 0 V  
75  
V
V
2.0  
4.0  
- ABS Systems  
ꢀ
± 100  
nA  
DC/DC Converters and Off-line UPS  
ꢀ
Primary Switch for 24V and 48V  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
μA  
μA  
Systems  
TJ = 150°C  
250  
ꢀ
High Current Switching  
Applications  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
9.7  
12 mΩ  
DS99632 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA76N075T  
IXTP76N075T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
55  
S
Ciss  
Coss  
Crss  
2580  
390  
90  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
RG = 10 Ω (External)  
20  
40  
38  
33  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
57  
13.6  
12.4  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCH  
0.85°C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
Symbol  
Test Conditions  
Characteristic Values  
L1  
L2  
L3  
L4  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
76  
A
A
R
0.46  
0.74  
.018  
.029  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
240  
1.1  
TO-220 (IXTP) Outline  
V
IF = 25 A, -di/dt = 100 A/μs  
80  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
PRELIMINARYTECHNICALINFORMATION  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTA76N075T  
IXTP76N075T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
60  
30  
5V  
8
5V  
0
0
2
4
6
10  
12  
14  
16  
18  
20  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 38A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 76A  
D
I
= 38A  
D
5V  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 38A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.2  
3
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
T = 175ºC  
J
15V - - - -  
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
0
25  
50  
75 100 125 150 175 200 225 250 275  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA76N075T  
IXTP76N075T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
T
J
= -40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
1.6  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
220  
200  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 38V  
DS  
I
I
= 10A  
D
G
= 10mA  
T
= 150ºC  
J
60  
40  
T
= 25ºC  
1
J
20  
0
0
5
10 15 20 25 30 35 40 45 50 55 60  
QG - NanoCoulombs  
0.4  
0.6  
0.8  
1.2  
1.4  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA76N075T  
IXTP76N075T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
50  
47  
44  
41  
38  
35  
32  
29  
26  
23  
20  
17  
50  
47  
44  
41  
38  
35  
32  
29  
26  
23  
20  
17  
R
= 10  
Ω
G
T = 25ºC  
J
V
V
= 10V  
GS  
DS  
= 37V  
R
= 10  
Ω
G
V
V
= 10V  
GS  
DS  
= 37V  
I
= 30A  
D
T = 125ºC  
J
I
= 10A  
D
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
90  
34  
32  
30  
28  
26  
24  
22  
20  
18  
35  
60  
55  
50  
45  
40  
35  
30  
t r  
td(on) - - - -  
TJ = 125ºC, V = 10V  
80  
70  
60  
50  
40  
30  
20  
10  
GS  
I
= 30A  
34  
33  
32  
31  
30  
29  
D
I
= 10A  
D
V
= 37V  
DS  
I
= 10A  
D
I
= 30A  
D
t f  
td(off) - - - -  
R
G
= 10 , V = 10V  
Ω
GS  
V
= 37V  
DS  
10 12 14 16 18 20 22 24 26 28 30 32 34  
RG - Ohms  
25  
35  
45 55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Fig. 17. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Drain Current  
36  
35  
34  
33  
32  
31  
30  
29  
65  
100  
90  
80  
70  
60  
50  
40  
30  
170  
150  
130  
110  
90  
tf  
td(off)  
- - - -  
t f  
R
td(off)  
- - - -  
= 10 , VGS = 10V  
60  
55  
50  
45  
40  
35  
30  
T = 125ºC, VGS = 10V  
J
G
Ω
TJ = 125ºC  
VDS = 37V  
VDS = 37V  
I
= 10A  
D
I
= 30A  
D
70  
T = 25ºC  
J
50  
30  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
10 12 14 16 18 20 22 24 26 28 30 32 34  
RG - Ohms  
ID - Amperes  
IXYS REF: T_76N075T (2V) 7-06-06.xls  
© 2006 IXYS CORPORATION All rights reserved  
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