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IXTT1N450HV

型号：

IXTT1N450HV

描述：

高压功率MOSFET[ High Voltage Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

156 K

下载PDF手册
Preliminary Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4500V  
= 1A  
IXTT1N450HV  
RDS(on) ≤ 85Ω  
N-Channel Enhancement Mode  
TO-268 (IXTT)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
4500  
4500  
V
V
VDGR  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
1
3
A
A
PD  
TC = 25°C  
520  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
z
High Blocking Voltage  
High Voltage Package  
z
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Weight  
4
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
z
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
Laser and X-Ray Generation Systems  
z
VGS(th)  
IGSS  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
3.5  
6.0  
V
z
z
±100 nA  
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.5kV  
VDS = 3.6kV  
10 μA  
50 μA  
μA  
TJ = 100°C  
25  
RDS(on)  
VGS = 10V, ID = 50mA, Note 1  
85  
Ω
DS100500A(04/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT1N450HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 (HV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 200mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
0.28  
0.46  
S
Ciss  
Coss  
Crss  
1730  
78  
pF  
pF  
pF  
28  
PINS:  
1 - Gate  
2 - Source  
3 - Drain  
RGi  
21  
Ω
td(on)  
tr  
td(off)  
tf  
34  
60  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 500V, ID = 0.5 • ID25  
RG = 10Ω (External)  
58  
127  
Qg(on)  
Qgs  
40  
10  
20  
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
RthJC  
0.24 °C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
1
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 1A, VGS = 0V, Note 1  
IF = 1A, -di/dt = 50A/μs, VR = 100V  
5
2.0  
V
1.75  
μs  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTT1N450HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VGS = 10V  
9V  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VGS = 10V  
8V  
8V  
7V  
7V  
6.5V  
6V  
6V  
0
50  
100  
150  
200  
250  
300  
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VGS = 10V  
7V  
VGS = 10V  
I D = 1A  
I D = 0.5A  
6V  
5V  
20  
40  
60  
80  
100  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTT1N450HV  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VDS = 1000V  
I D = 500mA  
I G = 1mA  
TJ = 125ºC  
TJ = 25ºC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1
10,000  
1,000  
100  
= 1 MHz  
f
C
C
C
iss  
0.1  
oss  
rss  
0.01  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTT1N450HV  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
@ TC = 75ºC  
10  
10  
RDS(on) Limit  
RDS(on) Limit  
25µs  
100µs  
25µs  
1
1
100µs  
1ms  
1ms  
10ms  
10ms  
0.1  
0.1  
100ms  
100ms  
DC  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
DC  
T
T
0.01  
100  
0.01  
100  
1,000  
10,000  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N450(H7)10-09-12  
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