SS
MM
DD
TT
yy
pp
ee
T
r
a
n
s
i
s
t
o
r
s
Product specification
PZTA42
SOT-223
Unit: mm
■ Features
● High breakdown voltage
+0.2
+0.2
3.50-0.2
6.50-0.2
● Low collector-emitter saturation voltage
+0.2
0.90-0.2
● Complementary to PZTA92(PNP)
+0.1
3.00-0.1
+0.3
7.00-0.3
4
1 Base
2 Collector
1
2
3
+0.1
3 Emitter
0.70-0.1
2.9
4.6
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
300
300
6
Unit
V
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
500
1
mA
W
℃
℃
PC
Tj
150
Storage Temperature
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Symbol
Test conditions
Min
300
300
6
Typ
Max
Unit
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
IcBO
Ic= 100 μA， IE=0
V
Ic= 1 mA， IB=0
V
IE= 100 μA， IC=0
VCB= 200 V , IE=0
VEB= 6V , IC=0
0.1
0.1
μA
μA
Emitter cutoff current
IEBO
VCE= 10V, IC= 1mA
VCE= 10V, IC= 10mA
VCE= 10V, IC= 30mA
25
40
40
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
VCE(sat) IC=20 mA, IB= 2mA
VBE(sat) IC= 20 mA, IB= 2mA
0.5
0.9
3.0
V
V
Cob
fT
VCB = 20V, f = 1.0MHz, IE = 0
VCE= 20V, IC= 10mA,f=100MHz
pF
Transition frequency
50
MHz
■ Marking
Marking
A42
http://www.twtysemi.com
1 of 1
sales@twtysemi.com
4008-318-123
