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IXTN200N10L2

型号：

IXTN200N10L2

描述：

线性L2TM功率MOSFET W /扩展FBSOA[ Linear L2TM Power MOSFET w/ Extended FBSOA ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

170 K

下载PDF手册
Advance Technical Information  
Linear L2TM Power  
MOSFET w/ Extended  
VDSS = 100V  
ID25 = 178A  
IXTN200N10L2  
FBSOA  
RDS(on) ≤ 11mΩ  
N-Channel Enhancement Mode  
GuaranteedFBSOA  
AvalancheRated  
miniBLOC,SOT-227  
E153432  
S
Symbol  
VDSS  
TestConditions  
MaximumRatings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
D
ID25  
IDM  
TC =25°C  
TC = 25°C, Pulse Width Limited by TJM  
178  
500  
A
A
G = Gate  
D = Drain  
S = Source  
IA  
TC =25°C  
TC =25°C  
100  
5
A
J
EAS  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
PD  
TC =25°C  
830  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
• MiniBLOCwith AluminiumNitride  
Isolation  
VISOL  
Md  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 Minute  
t = 1 Second  
2500  
3000  
V~  
V~  
• Designed for Linear Operation  
• International Standard Package  
ꢀGuaranteed FBSOA at 75°C  
• AvalancheRated  
• Molding Epoxy Meets UL94 V-0  
FlammabilityClassification  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Advantages  
• Easy to Mount  
• SpaceSavings  
• High Power Density  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 3mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS,VGS = 0V  
V
V
Applications  
4.5  
• ProgrammableLoads  
• CurrentRegulators  
• DC-DCConverters  
• BatteryChargers  
• DCChoppers  
• Temperature and Lighting Controls  
±200 nA  
IDSS  
10 μA  
250 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
11 mΩ  
DS100238(2/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTN200N10L2  
Symbol  
TestConditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 60A, Note 1  
55  
73  
90  
S
Ciss  
Coss  
Crss  
23  
3200  
610  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
40  
225  
127  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 100A  
RG = 1Ω (External)  
Qg(on)  
Qgs  
540  
115  
226  
nC  
nC  
nC  
(M4 screws (4x) supplied)  
VGS= 10V, VDS = 0.5 • VDSS, ID = 100A  
Qgd  
RthJC  
RthCS  
0.15 °C/W  
°C/W  
0.05  
Safe-Operating-AreaSpecification  
Symbol  
SOA  
TestConditions  
Characteristic Values  
Min.  
Typ.  
Max.  
VDS = 100V, ID = 5A, TC = 75°C , tp = 5s  
500  
W
Source-DrainDiode  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
200  
800  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
IRM  
QRM  
245  
24.4  
3.0  
ns  
A
μC  
IF = 100A, -di/dt = 100A/μs  
VR =50V, VGS = 0V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTN200N10L2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 20V  
VGS = 20V  
14V  
12V  
10V  
12V  
10V  
8V  
8V  
7V  
7V  
6V  
60  
6V  
4V  
40  
20  
0
0
0.0  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
2
4
6
8
10  
12  
14  
16  
18  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
VGS = 10V  
14V  
12V  
10V  
I D = 200A  
8V  
I D = 100A  
60  
6V  
4V  
40  
20  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 100A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
200  
VGS = 10V  
20V  
TJ = 125ºC  
180  
160  
140  
120  
100  
80  
- - - -  
TJ = 25ºC  
60  
40  
20  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTN200N10L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
60  
- 40ºC  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
800  
10  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
320  
280  
240  
200  
160  
120  
80  
VDS = 50V  
I D = 100A  
I
G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
40  
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
100  
200  
300  
400  
500  
600  
700  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
C
C
oss  
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTN200N10L2  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
T
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_200N10L2(9R)1-26-10  
Mouser Electronics  
Authorized Distributor  
Click to View Pricing, Inventory, Delivery & Lifecycle Information:  
IXYS:  
IXTN200N10L2  
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