PZT4403
PNP Transistor
Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-223
Description
The PZT4403 is designed for general
purpose switching and amplifier applications.
Features
*High Power Dissipation: 1500mW at 25oC
*High DC Current Gain: 100~300 at 150mA
*Complementary to PZT4401
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
Millimeter
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
4 4 0 3
6.30
3.30
3.30
1.40
Date Code
0.60
0.25
0.80
0.35
H
B
C
E
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
-40
Units
VCBO
Collector-Base Voltage
V
V
VCEO
VEBO
IC
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
mA
Collector Current (Continous)
Total Power Dissipation
-600
1.5
W
PD
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
*BVCEO
BVEBO
ICES
Min
-40
Max
Test Conditions
IC=-100µA
IC=-1mA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-
-
-
-
-
-
-
-40
V
V
IE=-10µA
VCE=-35V,VBE=-0.4V
-5
-
-100
-400
-750
nA
-
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
-
-
-
IC=-150mA,IB=-15mA
IC=- 500mA,IB=- 50mA
mV
mV
mV
V
Collector Saturation Voltage
Base Satruation Voltage
-
-
-950
-1.3
IC=-
150mA,IB=-15mA
-
*VBE(sat)2 -750
IC=- 500mA,IB=-50mA
-
-
-
-
-
*hFE1
*hFE2
*hFE3
30
60
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
DC Current Gain
-
100
VCE=-1V, IC=-10 mA
-
-
-
-
*hFE4
*hFE5
300
-
100
20
VCE=-1V, IC=-150mA
VCE=-2V, IC=-500mA
Gain-Bandwidth Product
Output Capacitance
-
fT
MH
pF
VCE=-10V, IC=-20mA,f=100MHz
VCB=-10V, f=1MHz
200
-
z
8.5
Cob
≦
≦
*Pulse width 380 s, Duty Cycle 2%
µ
Classification of hFE4
R
Rank
Q
100~210
Range
190~300
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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