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5N80_1108

型号：

5N80_1108

描述：

5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ]

品牌：

UTC[ Unisonic Technologies ]

页数：

5 页

PDF大小：

178 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
5N80  
Preliminary  
Power MOSFET  
5A, 800V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 5N80 is a N-channel enhancement mode power  
MOSFET. It use UTC advanced technology to provide avalanche  
rugged technology and low gate charge.  
It can be applied in high current, high speed switching, switch  
mode power supplies (SMPS), consumer and industrial lighting,  
DC-AC inverters for welding equipment and uninterruptible power  
supply(UPS).  
„
FEATURES  
* RDS(ON): 2.0Ω (TYP.)  
* Avalanche rugged technology  
* Low input capacitance  
* Low gate charge  
* Application oriented characterization  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
1
2
D
D
D
3
S
S
S
Lead Free  
Halogen Free  
5N80L-TA3-T  
5N80L-TF1-T  
5N80L-TF3-T  
5N80G-TA3-T  
5N80G-TF1-T  
5N80G-TF3-T  
TO-220  
TO-220F1  
TO-220F  
G
G
G
Tube  
Tube  
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 5  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-483.d  
5N80  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDS  
RATINGS  
800  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain-Gate Voltage  
VGS=0  
VGS  
±30  
V
RGS=20kΩ  
VDGR  
ID  
800  
V
Continuous  
Pulsed (Note 2)  
5.5  
A
Drain Current (Continuous)  
IDM  
20  
A
Avalanche Energy  
Power Dissipation  
Single Pulsed (Note 3)  
TO-220  
EAS  
320  
mJ  
125  
PD  
W
TO-220F /TO-220F1  
TO-220  
40  
1
Derating Factor  
W/°C  
TO-220F /TO-220F1  
0.32  
150  
Junction Temperature  
Storage Temperature  
TJ  
°C  
°C  
TSTG  
-55~150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width limited by safe operating area.  
3. Starting TJ=25°C, ID=IAR, VDD=50V  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
Junction to Ambient  
θJA  
TO-220  
1
Junction to Case  
θJC  
°C/W  
TO-220F /TO-220F1  
3.12  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R502-483.d  
www.unisonic.com.tw  
5N80  
Preliminary  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS ID=250µA, VGS=0V  
800  
V
IDSS  
VDS=800V, VGS=-0V  
VGS=+30V  
25  
µA  
Forward  
+100 nA  
Gate- Source Leakage Current  
IGSS  
Reverse  
VGS=-30V  
-100  
nA  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH) VDS=VGS, ID=250µA  
3
5
5
2.5  
4
V
ꢀ
A
VGS=10V, ID=2.5A  
RDS(ON)  
2.0  
Static Drain-Source On-State Resistance  
VGS=10V, ID=2.5A, TC=100°C  
VDS>ID(ON)×RDS(ON)max,VGS=10V  
On State Drain Current  
DYNAMIC PARAMETERS  
Input Capacitance  
ID(ON)  
CISS  
COSS  
CRSS  
1190 1450  
pF  
pF  
pF  
VGS=0V, VDS=25V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
165  
70  
200  
85  
QG  
QGS  
QGD  
tD(ON)  
tR  
75  
9
95  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
GS=10V, VDD=500V, ID=6A  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
(Note 1, 2)  
33  
50  
85  
120  
30  
VDD=400V, ID=2.5A, RG=50ꢀ  
65  
105  
150  
40  
V
GS=10V (Note 1, 2)  
VDD=640V, ID=5.5A, RG=50ꢀ  
GS=10V (Note 1, 2)  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
VSD  
trr  
ISD=5.5A, VGS=0V  
2
V
ns  
nC  
A
700  
7.7  
22  
I
SD=5.5A,dI/dt=100A/µs,  
DD=80V,TJ=150°C (Note 1)  
Reverse Recovery Charge  
Reverse Recovery Current  
Source-Drain Current  
QRR  
IRRM  
ISD  
V
5.5  
20  
A
Source-Drain Current (Pulsed) (Note 1)  
ISDM  
A
Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%.  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R502-483.d  
www.unisonic.com.tw  
5N80  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R502-483.d  
www.unisonic.com.tw  
5N80  
Preliminary  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS(Cont.)  
VDS  
90%  
10%  
VGS  
tD(ON)  
tD(OFF)  
tF  
tR  
Switching Test Circuit  
Switching Waveforms  
VGS  
QG  
10V  
QGS  
QGD  
Charge  
Gate Charge Test Circuit  
Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
Unclamped Inductive Switching Waveforms  
tp  
Unclamped Inductive Switching Test Circuit  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R502-483.d  
www.unisonic.com.tw  
厂商 型号 描述 页数 下载

UTC

 		5N80 5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ] 5 页

UTC

 		5N80G-TA3-T 5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ] 5 页

UTC

 		5N80G-TF1-T 5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ] 5 页

UTC

 		5N80G-TF3-T 5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ] 5 页

UTC

 		5N80L-TA3-T 5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ] 5 页

UTC

 		5N80L-TF1-T 5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ] 5 页

UTC

 		5N80L-TF3-T 5A ， 800V N沟道功率MOSFET[ 5A, 800V N-CHANNEL POWER MOSFET ] 5 页

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