5N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS ID=250µA, VGS=0V
800
V
IDSS
VDS=800V, VGS=-0V
VGS=+30V
25
µA
Forward
+100 nA
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
3
5
5
2.5
4
V
ꢀ
A
VGS=10V, ID=2.5A
RDS(ON)
2.0
Static Drain-Source On-State Resistance
VGS=10V, ID=2.5A, TC=100°C
VDS>ID(ON)×RDS(ON)max,VGS=10V
On State Drain Current
DYNAMIC PARAMETERS
Input Capacitance
ID(ON)
CISS
COSS
CRSS
1190 1450
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
165
70
200
85
QG
QGS
QGD
tD(ON)
tR
75
9
95
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDD=500V, ID=6A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 1, 2)
33
50
85
120
30
VDD=400V, ID=2.5A, RG=50ꢀ
65
105
150
40
V
GS=10V (Note 1, 2)
VDD=640V, ID=5.5A, RG=50ꢀ
GS=10V (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
trr
ISD=5.5A, VGS=0V
2
V
ns
nC
A
700
7.7
22
I
SD=5.5A,dI/dt=100A/µs,
DD=80V,TJ=150°C (Note 1)
Reverse Recovery Charge
Reverse Recovery Current
Source-Drain Current
QRR
IRRM
ISD
V
5.5
20
A
Source-Drain Current (Pulsed) (Note 1)
ISDM
A
Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%.
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-483.d
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