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1SV121

型号:

1SV121

描述:

硅外延平面PIN二极管[ SILICON EPITAXIAL PLANAR PIN DIODE ]

品牌:

TAYCHIPST[ SHENZHEN TAYCHIPST ELECTRONIC CO., LTD ]

页数:

2 页

PDF大小:

5128 K

1SV121  
400V  
1.0A  
SILICON EPITAXIAL PLANAR PIN DIODE  
FEATURES  
• Low capacitance.(C=0.7pF max)  
• Small glass package (MHD) enables easy  
mounting and high reliability.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Value  
Unit  
Reverse voltage  
V
100  
100  
250  
175  
V
R
Forward current  
I
mA  
mW  
°C  
F
Power dissipation  
Junction temperature  
Storage temperature  
P
d
T
T
j
-65 to +17  
°C  
stg  
Electrical Characteristics (Ta = 25°C)  
Ite  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
Forward voltage  
Reverse current  
Capacitance  
V
1.1  
V
I = 50 mA  
F
F
I
100  
nA  
V = 30 V  
R
R
C
0.7  
pF  
K  
V = 50 V, f = 1 MHz  
R
r
r
1.0  
I = 10 µA, f = 100 MHz  
F
f1  
f2  
Forward resistance  
10  
I = 10 mA, f = 100 MHz  
F
E-mail: sales@taychipst.com  
Web Site: www.taychipst.com  
1 of 2  
1SV121  
400V  
1.0A  
SILICON EPITAXIAL PLANAR PIN DIODE  
RATINGS AND CHARACTERISTIC CURVES  
1SV121  
10-3  
10-4  
10-5  
10-6  
10-7  
10-8  
10-9  
10-7  
10-8  
10-9  
10-10  
-10  
10-11  
10  
10-11  
-12  
10-12  
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
60  
80  
0
20  
40  
100  
Reverse voltage VR (V)  
Forward voltage VF (V)  
Fig.2 Reverse current Vs.  
Reverse voltage  
Fig.1 Forward current Vs.  
Forward voltage  
102  
10  
105  
104  
f=1MHz  
f=100MHz  
103  
102  
1.0  
10-1  
10  
-2  
1.0  
10  
-2  
10  
102  
-3  
10  
10-6  
10  
10-4  
-5  
10-1  
10  
1.0  
Reverse voltage VR (V)  
Forward current IF (A)  
Fig.3 Capacitance Vs.  
Reverse voltage  
Fig.4 Forward resistance  
Vs. Forward current  
E-mail: sales@taychipst.com  
Web Site: www.taychipst.com  
2 of 2  
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