找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTY02N120P

型号:

IXTY02N120P

描述:

N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

134 K

Advance Technical Information  
PolarTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 0.2A  
RDS(on) 75Ω  
IXTP02N120P  
IXTY02N120P  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
D (Tab)  
S
TJ = 25°C to 150°C  
1200  
1200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
TO-252 (IXTY)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
ID25  
IDM  
TC = 25°C  
0.2  
0.6  
A
A
S
TC = 25°C, Pulse Width Limited by TJM  
D (Tab)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
0.2  
40  
A
mJ  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
33  
V/ns  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Packages  
z Avalanche Rated  
z Low Package Inductance  
TL  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-220  
TO-252  
3.00  
0.35  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
2.0  
Typ.  
Max.  
z Switch-Mode and Resonant-Mode  
Power Supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z DC-DC Converters  
4.0  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
±50 nA  
μA  
25 μA  
75  
IDSS  
1
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
60  
Ω
DS100201(10/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTP02N120P  
IXTY02N120P  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 0.5 ID25, Note 1  
0.12  
0.20  
S
Ciss  
Coss  
Crss  
104  
8.6  
1.9  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
6
10  
21  
39  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 60V, ID = 0.5 ID25  
,
RG = 50Ω (External)  
Qg(on)  
Qgs  
Qgd  
4.70  
0.37  
3.20  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Pins: 1 - Gate  
2 - Drain  
RthJC  
RthCS  
3.8 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
0.2  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
0.8  
1.3  
trr  
IRM  
QRM  
1.6  
3.5  
2.8  
μs  
A
μC  
IF = 0.2A, -di/dt = 50A/μs,  
VR = 100V, VGS = 0V  
TO-252 (IXTY) Outline  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
Note 1: Pulse test, t 300μs; duty cycle, d 2%.  
Dim. Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
2.19 2.38  
0.89 1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.13  
0
0.005  
0.035  
0.64 0.89  
0.025  
b1  
b2  
0.76 1.14  
5.21 5.46  
0.030  
0.205  
0.045  
0.215  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
c
c1  
0.46 0.58  
0.46 0.58  
0.018  
0.018  
0.023  
0.023  
D
D1  
5.97 6.22  
4.32 5.21  
0.235  
0.170  
0.245  
0.205  
E
E1  
6.35 6.73  
4.32 5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42  
0.51 1.02  
0.370  
0.020  
0.410  
0.040  
L1  
L2  
L3  
0.64 1.02  
0.89 1.27  
2.54 2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP02N120P  
IXTY02N120P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
VGS = 10V  
VGS = 10V  
7V  
6V  
8V  
7V  
6V  
5V  
4V  
5V  
60  
4V  
3V  
40  
20  
0
0
0
0
2
4
6
8
10  
12  
14  
0
50  
100  
150  
200  
250  
300  
350  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100mA Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
4V  
I D = 200mA  
I D = 100mA  
60  
40  
20  
0
5
10  
15  
20  
25  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 100mA Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
220  
200  
180  
160  
140  
120  
100  
80  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
60  
40  
20  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - MilliAmperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTP02N120P  
IXTY02N120P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
0.9  
40  
0
50  
100  
150  
200  
250  
300  
350  
VGS - Volts  
ID - MilliAmperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
800  
700  
600  
500  
400  
300  
200  
100  
0
VDS = 600V  
I
I
D = 100mA  
G = 1mA  
TJ = 125ºC  
TJ = 25ºC  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
1,000  
100  
10  
10.0  
= 1 MHz  
f
C
iss  
1.0  
C
oss  
C
rss  
1
0.1  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_02N120P(F2)10-01-09  
厂商 型号 描述 页数 下载

IXYS

IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

IXTA05N100P [ Fast Intrinsic Diode ] 7 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.187654s