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IXTP80N10T

型号：

IXTP80N10T

描述：

TrenchMVTM功率MOSFET[ TrenchMVTM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

190 K

下载PDF手册
TrenchMVTM  
Power MOSFET  
VDSS = 100V  
ID25 = 80A  
IXTA80N10T  
IXTP80N10T  
RDS(on) ≤ 14mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
Fast Intrinsic Diode  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
D (Tab)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
80  
220  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
D
D (Tab)  
= Drain  
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
400  
A
mJ  
G = Gate  
S = Source  
D
PD  
TC = 25°C  
230  
10  
W
Tab = Drain  
dV/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
V/ns  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z 175°C Operating Temperature  
z Avalanche Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
Automotive  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 100μA  
VGS = ± 20V, VDS = 0V  
VDS = 105V, VGS= 0V  
105  
V
V
- Motor Drives  
- DC/DC Conversion  
- 42V Power Bus  
2.5  
5.0  
± 200 nA  
μA  
- ABS Systems  
z
DC/DC Converters and Off-Line UPS  
Primary Switch for 24V and 48V  
IDSS  
5
z
TJ = 150°C  
150 μA  
Systems  
z
High Current Switching Applications  
Distributed Power Architechtures  
RDS(on)  
VGS = 10V, ID = 25A, Note 1 & 2  
14 mΩ  
z
and VRMs  
Electronic Valve Train Systems  
z
DS99648A(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA80N10T  
IXTP80N10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
33  
55  
S
Ciss  
Coss  
Crss  
3040  
420  
90  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
31  
54  
40  
48  
ns  
ns  
ns  
ns  
1. Gate  
2. Drain  
3. Source  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A  
RG = 15Ω (External)  
Qg(on)  
Qgs  
60  
21  
15  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Qgd  
RthJC  
RthCS  
0.65 °C/W  
°C/W  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
0.50  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
TO-220 (IXTP) Outline  
IS  
VGS = 0V  
80  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 25A, VGS = 0V, Note 1  
220  
1.1  
V
100  
ns  
IF = 25A, -di/dt = 100A/μs  
VR = 50V, VGS = 0V  
Pins:  
1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. On through-kole packages RDS(on) Kelvin test contact location  
must be 5 mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA80N10T  
IXTP80N10T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
280  
240  
200  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
40  
0
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
2.4  
250  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
9V  
8V  
VGS = 10V  
I D = 80A  
7V  
I D = 40A  
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 40A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
15V  
TJ = 175ºC  
- - - -  
TJ = 25ºC  
25  
50  
75  
100  
125  
150  
175  
200  
225  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA80N10T  
IXTP80N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
150ºC  
60  
TJ = 150ºC  
25ºC  
40  
- 40ºC  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.5  
0.3  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
1.5  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
200  
160  
120  
80  
VDS = 50V  
I D = 25A  
I G = 10mA  
TJ = 150ºC  
40  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
10,000  
1,000  
100  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA80N10T  
IXTP80N10T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
70  
65  
60  
55  
50  
45  
40  
35  
RG = 15Ω , VGS = 10V  
VDS = 50V  
RG = 15ꢀ VGS = 10V  
,
VDS = 50V  
TJ = 25ºC  
I D = 30A  
TJ = 125ºC  
I D = 10A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
25  
15  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Fig. 16. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Switching Times vs. Junction Temperature  
280  
240  
200  
160  
120  
80  
95  
85  
75  
65  
55  
45  
35  
25  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
76  
72  
68  
64  
60  
56  
52  
48  
44  
40  
36  
tr  
td(on) - - - -  
TJ = 125ºC, VGS = 10V  
tf  
td(off) - - - -  
V
DS = 50V  
I D = 10A  
RG = 15Ω, VGS = 10V  
V
DS = 50V  
I D = 30A  
I D = 30A  
I D = 10A  
40  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
50  
48  
46  
44  
42  
40  
38  
78  
70  
62  
54  
46  
38  
30  
160  
140  
120  
100  
80  
270  
230  
190  
150  
110  
70  
tf  
td(off)  
- - - -  
tf  
RG = 15ꢀ, VGS = 10V  
DS = 50V  
td(off)  
- - - -  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
V
I D = 10A  
TJ = 125ºC  
TJ = 25ºC  
60  
I D = 30A  
40  
30  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
20  
25  
30  
35  
40  
45  
50  
55  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_80N10T(3V)12-11-07-A  
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