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IXTP56N15T

型号：

IXTP56N15T

描述：

N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

140 K

下载PDF手册
Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
IXTA56N15T  
IXTP56N15T  
VDSS = 150  
ID25 = 56  
RDS(on) ≤ 36 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
150  
150  
V
V
TJ = 25°C to 175°C; RGS = 1 MΩ  
G
S
VGSM  
Transient  
30  
V
(TAB)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
56  
140  
A
A
TO-220 (IXTP)  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
5
500  
A
mJ  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
G
(TAB)  
D
S
TC = 25°C  
300  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Features  
z Unclamped Inductive Switching (UIS)  
rated  
Weight  
TO-220  
TO-263  
3
2.5  
g
g
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Advantages  
z
Easy to mount  
Space savings  
High power density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
150  
V
V
2.5  
4.5  
VGS  
=
20 V, VDS = 0 V  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
200  
μA  
μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 28 A, Notes 1, 2  
36 mΩ  
DS99800 (03/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA56N15T  
IXTP56N15T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 28 A, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
23  
39  
S
Ciss  
Coss  
Crss  
2250  
330  
50  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 28 A  
RG = 5 Ω (External)  
16  
17  
43  
18  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
34  
10  
11  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCH  
0.50 °C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
Symbol  
Test Conditions  
Characteristic Values  
L1  
L2  
L3  
L4  
TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0 V  
56  
A
A
R
0.46  
0.74  
.018  
.029  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF =25 A, VGS = 0 V, Note 1  
160  
1.1  
TO-220 (IXTP) Outline  
V
IF = 25 A, -di/dt = 100 A/μs  
100  
ns  
VR = 50 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered  
byoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2 7,071,537  
7,005,734B2 7,157,338B2  
7,063,975B2  
IXTA56N15T  
IXTP56N15T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
150  
135  
120  
105  
90  
V
= 10V  
V
= 10V  
9V  
GS  
GS  
9V  
8V  
8V  
7V  
75  
60  
7V  
45  
6V  
5V  
30  
6V  
8
15  
0
0
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
0
2
4
6
10 12 14 16 18 20 22 24 26 28  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 28A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
3.8  
3.4  
3
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
I
= 56A  
D
2.6  
2.2  
1.8  
1.4  
1
7V  
6V  
I
= 28A  
D
0.6  
0.2  
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 28A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T = 175ºC  
J
T = 25ºC  
J
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA56N15T  
IXTP56N15T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
0
3.4  
0.4  
0
3.8  
4.2  
4.6  
5
5.4  
5.8  
6.2  
6.6  
1.2  
35  
7
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 75V  
DS  
I
I
= 25A  
D
G
= 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
40  
20  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.3  
0
5
10  
15  
20  
25  
30  
35  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
10  
5
10  
15  
20  
25  
30  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA56N15T  
IXTP56N15T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
19  
17  
15  
13  
11  
9
R
V
V
= 5  
Ω
G
= 15V  
= 75V  
GS  
DS  
T = 25ºC  
J
R
V
V
= 5  
Ω
G
= 15V  
= 75V  
GS  
DS  
I
= 56A  
D
I
= 28A  
D
T = 125ºC  
J
8
7
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
14 17 20 23 26 29 32 35 38 41 44 47 50 53 56  
ID - Amperes  
T J - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
18  
19  
18  
17  
16  
15  
14  
22  
54  
t r  
td(on)  
- - - -  
t f  
R
td(off)  
- - - -  
17  
16  
15  
14  
13  
12  
11  
10  
9
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
52  
50  
48  
46  
44  
42  
40  
38  
36  
34  
TJ = 125ºC, V = 15V  
GS  
= 5 , V = 15V  
Ω
G
GS  
V
= 75V  
DS  
V
= 75V  
DS  
I
= 28A  
I
= 28A, 56A  
D
D
I
= 56A  
D
8
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20  
RG - Ohms  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
54  
52  
50  
48  
46  
44  
42  
40  
38  
36  
34  
45  
40  
35  
30  
25  
20  
15  
10  
5
110  
100  
90  
t f  
R
td(off)  
- - - -  
t f  
td(off)  
- - - -  
= 5 , VGS = 15V  
Ω
G
T = 125ºC, VGS = 15V  
J
TJ = 125ºC  
VDS = 75V  
VDS = 75V  
I
= 28A, 56A  
D
80  
T = 25ºC  
J
70  
60  
50  
T = 125ºC  
J
40  
30  
14 17 20 23 26 29 32 35 38 41 44 47 50 53 56  
ID - Amperes  
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20  
RG - Ohms  
IXYS REF: T_56N15T (4G) 12-07-06.xls  
© 2007 IXYS CORPORATION, All rights reserved  
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