IXTK 180N15P
Symbol
gfs
Test Conditions
Characteristic Values
TO-264 (IXTK) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
55
86
S
Ciss
Coss
Crss
7000
2250
515
pF
pF
pF
td(on)
tr
td(off)
tf
30
32
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
150
36
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
240
55
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.021
1.020
.780
.215 BSC
.000
.000
.056
.106
.122
.033
1.030
.786
Qgd
140
c
0.53
0.83
D
25.91 26.16
RthJC
RthCS
0.18° C/W
° C/W
E
e
J
19.81 19.96
5.46 BSC
0.00
0.00
0.15
0.25
0.25
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Source-Drain Diode
Characteristic Values
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
(TJ = 25°C, unless otherwise specified)
R
R1
S
T
3.81
1.78
6.04
1.57
4.32
2.29
6.30
1.83
.150
.070
.238
.062
.170
.090
.248
.072
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
180
A
A
V
ISM
380
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
150
2.3
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
