请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP152N085T

型号：

IXTP152N085T

描述：

初步的技术资料TrenchMVTM功率MOSFET[ Preliminary Technical Information TrenchMVTM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

220 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 85  
ID25 = 152  
RDS(on) ≤ 7.0 mΩ  
V
A
IXTA152N085T  
IXTP152N085T  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
85  
85  
V
V
G
S
VGSM  
Transient  
20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
152  
75  
410  
A
A
A
TO-220 (IXTP)  
IAR  
EAS  
TC =25°C  
TC = 25° C  
25  
750  
A
mJ  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 5 Ω  
3
V/ns  
G
(TAB)  
D
S
TC = 25° C  
360  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Weight  
TO-220  
TO-263  
3
2.5  
g
g
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
Automotive  
- Motor Drives  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
85  
V
V
2.0  
4.0  
- 42V Power Bus  
- ABS Systems  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
ꢀ
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
ꢀ
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
Systems  
High Current Switching  
TJ = 150° C  
ꢀ
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
5.8  
7.0 m Ω  
Applications  
DS99532 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA152N085T  
IXTP152N085T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263AA (IXTA) Outline  
(TJ = 25° C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
60  
100  
S
Ciss  
Coss  
Crss  
5500  
720  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
150  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
30  
50  
50  
45  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
114  
30  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
35  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCH  
0.42°C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
Symbol  
Test Conditions  
Characteristic Values  
L1  
L2  
L3  
L4  
TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0 V  
152  
A
A
R
0.46  
0.74  
.018  
.029  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
410  
1.0  
TO-220AB (IXTP) Outline  
V
IF = 25 A, -di/dt = 100 A/µs  
90  
ns  
VR = 40 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTA152N085T  
IXTP152N085T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
60  
40  
60  
5V  
2
20  
30  
5V  
0
0
0
1
3
4
5
6
7
8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
VDS - Volts  
1
1.1  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 76A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 152A  
D
I
= 76A  
D
60  
40  
5V  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2 2.4  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 76A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
140  
120  
100  
80  
V
= 10V  
15V  
GS  
External Lead Current Limit for TO-263 (7-Lead)  
- - - -  
T = 175ºC  
J
External Lead Current Limit for TO-3P, TO-220, & TO-263  
1.8  
1.6  
1.4  
1.2  
1
60  
40  
T = 25ºC  
J
20  
0.8  
0
0
50  
100  
150  
200  
250  
300  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA152N085T  
IXTP152N085T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
270  
240  
210  
180  
150  
120  
90  
140  
120  
100  
80  
T
J
= - 40ºC  
T
J
= -40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
60  
40  
60  
20  
30  
0
0
0
40  
80  
120  
160  
200  
240  
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
7
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
280  
240  
200  
160  
120  
80  
V
= 43V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
40  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
f = 1 MHz  
C
C
iss  
oss  
0.10  
C
rss  
0.01  
0.0001  
5
10  
15  
20  
25  
30  
35  
0.001  
0.01  
0.1  
1
10  
sion
VDS - Volts  
Pulse Width - Seconds  
IXTA152N085T  
IXTP152N085T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
R
V
V
= 5  
Ω
G
= 10V  
= 43V  
GS  
DS  
T = 25ºC  
J
R
V
V
= 5  
Ω
G
= 10V  
= 43V  
GS  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
110  
43  
41  
39  
37  
35  
33  
31  
29  
27  
25  
23  
47  
76  
t f  
td(off)  
- - - -  
t r  
td(on)  
- - - -  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
R
G
= 5 , V = 10V  
46  
45  
44  
43  
42  
41  
40  
Ω
GS  
72  
68  
64  
60  
56  
52  
48  
TJ = 125ºC, V = 10V  
GS  
V
= 43V  
DS  
V
= 43V  
DS  
I
= 25A  
D
I
= 50A  
D
I
= 25A  
D
I
= 50A  
D
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
46  
45  
44  
43  
42  
41  
40  
39  
80  
75  
70  
65  
60  
55  
50  
45  
130  
120  
110  
100  
90  
220  
200  
180  
160  
140  
120  
100  
80  
T = 25ºC  
J
I
= 25A  
D
tf  
td(off)  
- - - -  
= 5 , VGS = 10V  
Ω
TJ = 125ºC  
R
G
I
= 50A  
80  
D
V
DS = 43V  
70  
60  
T = 125ºC  
J
tf  
td(off)  
- - - -  
50  
60  
T = 125ºC, VGS = 10V  
J
40  
40  
TJ = 25ºC  
44  
V
DS = 43V  
30  
20  
24  
28  
32  
36  
40  
48  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
IXYS REF: T_152N085T (4V) 6-12-06.xls  
© 2006 IXYS CORPORATION All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.187170s