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IXTV22N60P

型号：

IXTV22N60P

描述：

PolarHVTM功率MOSFET N沟道增强模式[ PolarHVTM Power MOSFET N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

320 K

下载PDF手册
PolarHVTM  
Power MOSFET  
IXTQ 22N60P  
IXTV 22N60P  
IXTV 22N60PS  
VDSS  
ID25  
RDS  
= 600  
= 22  
≤ 350 mΩ  
V
A
(on)  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-3P (IXTQ)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGS  
Continuous  
Tranisent  
30  
40  
V
V
G
D
S
(TAB)  
VGSM  
ID25  
IDM  
TC =25° C  
22  
66  
A
A
TC = 25° C, pulse width limited by TJM  
PLUS220 (IXTV)  
IAR  
TC =25° C  
22  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
G
D
S
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
10  
V/ns  
D (TAB)  
TC =25° C  
400  
W
PLUS220SMD (IXTV_S)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
Md  
FC  
Mounting torque  
Mounting force  
(TO-3P)  
(PLUS 220)  
1.13/10 Nm/lb.in.  
D (TAB)  
11...65/2.5...15  
N/lb  
Weight  
TO-3P  
6
5.0  
g
g
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PLUS220 & PLUS220SMD  
Features  
Symbol  
Test Conditions  
Characteristic Values  
l
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
600  
V
V
l
Low package inductance  
- easy to drive and to protect  
3.0  
5.5  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
Advantages  
TJ = 125°C  
l
Easy to mount  
Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
350 mΩ  
l
l
High power density  
DS99250E(12/05)  
© 2005 IXYS All rights reserved  
IXTQ 22N60P IXTV 22N60P  
IXTV 22N60PS  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
15  
21  
S
Ciss  
Coss  
Crss  
3600  
305  
38  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
20  
20  
60  
23  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
62  
20  
25  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCS  
0.31 ° C/W  
° C/W  
(TO-3P)  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
Repetitive  
22  
66  
A
ISM  
A
V
PLUS220 (IXTV) Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
IF = 22A, -di/dt = 100 A/µs  
VR = 100V, VGS = 0 V  
trr  
QRM  
500  
4.0  
ns  
µC  
PLUS220SMD (IXTV_S) Outline  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXTQ 22N60P IXTV 22N60P  
IXTV 22N60PS  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
8V  
V
= 10V  
9V  
8V  
GS  
GS  
7.5V  
7V  
7.5V  
7V  
6
6.5V  
6V  
4
6V  
7
2
0
0
0
0
0
1
2
3
4
5
6
8
9
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
22  
20  
18  
16  
14  
12  
10  
8
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
GS  
= 10V  
8V  
7V  
V
GS  
= 10V  
6.5V  
6V  
I
= 22A  
D
I
= 11A  
D
6
4
5.5V  
5V  
0.7  
0.4  
2
0
2
4
6
8 10 12 14 16 18 20  
VD S - Volts  
-50  
-25  
0
25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 5. RDS(on) Norm alized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
24  
20  
16  
12  
8
V
= 10V  
GS  
º
T = 125 C  
J
1.8  
1.6  
1.4  
1.2  
1
4
T = 25  
J
º
C
0.8  
0
5
10  
15  
20  
I D - Amperes  
25  
30  
35  
40  
45  
-50  
-25  
0
TC - Degrees Centigrade  
25  
50  
75  
100 125 150  
© 2005 IXYS All rights reserved  
IXTQ 22N60P IXTV 22N60P  
IXTV 22N60PS  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
T
J
= -40 C  
º
25 C  
º
125 C  
º
T
J
= 125  
º
C
C
C
25  
º
º
6
6
-40  
3
3
0
0
4.5  
0.4  
0
5
5.5  
6
6.5  
7
7.5  
8
0
3
6
9
12 15 18 21 24 27 30  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
70  
60  
50  
40  
30  
20  
10  
0
V
= 300V  
DS  
I
I
= 11A  
D
G
= 10mA  
T = 125  
J
º
C
T = 25  
J
º
C
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10000  
1000  
100  
f = 1MHz  
R
Limit  
DS(on)  
C
C
iss  
25µs  
100µs  
oss  
rss  
1ms  
10ms  
DC  
T
T
= 150ºC  
= 25ºC  
C
J
C
10  
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 22N60P IXTV 22N60P  
IXTV 22N60PS  
Fig . 13. M axim u m T r an s ie n t T h e rm al Re s is tan ce  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Puls e W idth - millisec onds  
© 2005 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

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IXYS

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IXYS

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LITTELFUSE

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IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

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