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IXTH120P065T

型号：

IXTH120P065T

描述：

TrenchPTM功率MOSFET P沟道增强模式[ TrenchPTM Power MOSFETs P-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

195 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
VDSS = - 65V  
ID25 = - 120A  
IXTA120P065T  
IXTP120P065T  
IXTH120P065T  
RDS(on)  
≤
10mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
G
S
D (Tab)  
TO-220AB (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 65  
- 65  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
G
D
S
D (Tab)  
TO-247 (IXTH)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 120  
A
A
- 360  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 60  
1
A
J
G
PD  
TC = 25°C  
298  
W
D
S
D (Tab)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Extended FBSOA  
z Fast Intrinsic Diode  
z
Low RDS(ON) and QG  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, Unless Otherwise Specified)  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 65  
V
Applications  
- 2.0  
- 4.0  
V
±100 nA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
IDSS  
- 10 μA  
- 750 μA  
z
TJ = 125°C  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
10 mΩ  
z
z
DS100026B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA120P065T IXTH120P065T  
IXTP120P065T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
45  
75  
S
Ciss  
Coss  
Crss  
13.2  
1345  
505  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
31  
28  
38  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = - 33V, ID = - 50A  
RG = 1Ω (External)  
Qg(on)  
Qgs  
185  
55  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
nC  
1 = Gate  
2 = Drain  
3 = Source  
Qgd  
58  
nC  
RthJC  
RthCS  
0.42 °C/W  
(TO-220)  
(TO-247)  
0.50  
0.21  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 120  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 60A, VGS = 0V, Note 1  
- 480  
-1.3  
TO-220 Outline  
trr  
QRM  
IRM  
53  
77  
- 2.9  
ns  
nC  
A
IF = - 60A, -di/dt = -100A/μs  
VR = - 33V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Pins:  
1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Drain  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
3. Source  
L1  
4. Drain  
L2  
L3  
L4  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA120P065T IXTH120P065T  
IXTP120P065T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-350  
-300  
-250  
-200  
-150  
-100  
-50  
-120  
-100  
-80  
-60  
-40  
-20  
0
VGS = -10V  
VGS = -10V  
- 9V  
- 8V  
- 9V  
- 8V  
- 7V  
- 6V  
- 7V  
- 6V  
- 5V  
- 5V  
-6  
0
0
-2  
-4  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
0
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-120  
-100  
-80  
-60  
-40  
-20  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = -10V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
- 6V  
I D = -120A  
I D = - 60A  
- 5V  
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
-1.8  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 60A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-140  
VGS = -10V  
-120  
-100  
-80  
-60  
-40  
-20  
0
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-60  
-120  
-180  
-240  
-300  
-360  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA120P065T IXTH120P065T  
IXTP120P065T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-180  
-160  
-140  
-120  
-100  
-80  
TJ = - 40ºC  
100  
80  
60  
40  
20  
0
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
-60  
-40  
-20  
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-1.5  
-40  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
-160  
-180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-300  
-250  
-200  
-150  
-100  
-50  
VDS = - 33V  
I
I
D = - 60A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
-1.3  
-1.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000  
-
= 1 MHz  
f
RDS(on) Limit  
100µs  
25µs  
1ms  
10ms  
-
100  
C
iss  
External Lead  
Current Limit  
C
oss  
- 10  
DC, 100ms  
TJ = 150ºC  
C
rss  
TC = 25ºC  
Single Pulse  
-
1
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-
-
-
100  
1
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXTA120P065T IXTH120P065T  
IXTP120P065T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
32  
30  
28  
26  
24  
22  
20  
18  
16  
32  
28  
24  
20  
16  
12  
RG = 1Ω, VGS = -10V  
VDS = - 33V  
TJ = 25ºC  
RG = 1Ω, VGS = -10V  
VDS = - 33V  
I D = - 25A  
I D = - 50A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-26  
-30  
-34  
-38  
-42  
-46  
-50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
24  
65  
60  
55  
50  
45  
40  
35  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
tf  
td(off) - - - -  
t r  
td(on) - - - -  
RG = 1Ω, VGS = -10V  
23  
22  
21  
20  
19  
18  
TJ = 125ºC, VGS = -10V  
VDS = - 33V  
VDS = - 33V  
I D = - 50A, - 25A  
I D = - 25A  
60  
I D = - 50A  
40  
20  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0
2
4
6
8
10  
12  
14  
16  
18  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
25  
24  
23  
22  
21  
20  
19  
18  
62  
200  
180  
160  
140  
120  
100  
80  
300  
270  
240  
210  
180  
150  
120  
90  
tf  
td(off) - - - -  
tf  
td(off) - - - -  
58  
54  
50  
46  
42  
38  
34  
RG = 1Ω, VGS = - 10V  
TJ = 125ºC, VGS = -10V  
VDS = - 33V  
VDS = - 33V  
TJ = 125ºC  
I D = - 50A  
TJ = 25ºC  
TJ = 125ºC  
60  
I D = - 25A  
40  
60  
TJ = 25ºC  
-46  
20  
30  
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
-26  
-30  
-34  
-38  
-42  
-50  
RG - Ohms  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA120P065T IXTH120P065T  
IXTP120P065T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_120P065T(A6)11-08-10-A  
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