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IXTP102N15T

型号：

IXTP102N15T

描述：

沟槽栅功率MOSFET N沟道增强型额定雪崩[ Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

239 K

下载PDF手册
IXTA102N15T  
IXTH102N15T  
IXTP102N15T  
IXTQ102N15T  
Trench Gate  
Power MOSFET  
VDSS = 150V  
ID25 = 102A  
RDS(on) ≤ 18mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
TO-247 (IXTH)  
TO-220 (IXTP)  
TO-3P (IXTQ)  
G
S
G
G
D
(TAB)  
(TAB)  
(TAB)  
G
S
D
(TAB)  
D
S
S
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C RGS = 1MΩ  
150  
150  
V
V
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
102  
75  
300  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
51  
750  
A
mJ  
Features  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C  
TC = 25°C  
10  
V/ns  
W
z International standard packages  
z Avalanche rated  
455  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Advantages  
z
Easy to mount  
Space savings  
High power density  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z
z
Md  
FC  
Mounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10  
Nmlb.in.  
N/lb.  
Mounting Force  
(TO-263)  
10..65/2.2..14.6  
Applications  
Weight  
TO-263  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
z DC-DC converters  
z Battery chargers  
TO-220  
TO-3P  
TO-247  
z Switched-mode and resonant-mode  
power supplies  
z DC choppers  
z AC motor drives  
z Uninterruptible power supplies  
z High speed power switching  
applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
150  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
V
V
5.0  
± 200 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
18 mΩ  
DS99661B(10/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA102N15T IXTH102N15T  
IXTP102N15T IXTQ102N15T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C unless otherwise specified)  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
80  
S
Ciss  
Coss  
Crss  
5220  
685  
95  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
20  
14  
25  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
87  
23  
31  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS , ID = 25A  
Qgd  
RthJC  
RthCH  
0.33 °C/W  
°C/W  
(TO-220)  
0.50  
0.25  
(TO-3P & TO-247)  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
102  
400  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
IRM  
QRM  
97  
8.4  
409  
ns  
A
nC  
IF = 51A, -di/dt = 100A/μs  
VR = 75V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA102N15T IXTH102N15T  
IXTP102N15T IXTQ102N15T  
TO-263 (IXTA) Outline  
TO-247 (IXTH) Outline  
∅ P  
1
2
3
e
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-3P (IXTQ) Outline  
TO-220 (IXTP) Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA102N15T IXTH102N15T  
IXTP102N15T IXTQ102N15T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
0
0
2
4
6
8
10  
12  
14  
16  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
4.0  
280  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 51A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
7V  
I D = 102A  
I D = 51A  
6V  
5V  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 51A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
External Lead Current Limit  
TJ = 175ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
ID - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
TC - Degrees Centigrade  
IXTA102N15T IXTH102N15T  
IXTP102N15T IXTQ102N15T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
VDS = 75V  
I D = 51A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
50  
25  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
10  
20  
30  
40  
50  
60  
70  
80  
90  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1000.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
oss  
1ms  
C
rss  
10ms  
100ms  
TJ = 175ºC  
DC  
TC = 25ºC  
Single Pulse  
= 1 MHz  
5
f
0.1  
10  
10  
100  
1000  
0
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: F_102N15T(6E)90-30-08  
IXTA102N15T IXTH102N15T  
IXTP102N15T IXTQ102N15T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
18  
17  
16  
15  
14  
13  
12  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
RG = 3.3Ω  
VGS = 10V  
DS = 75V  
RG = 3.3Ω  
VGS = 10V  
DS = 75V  
TJ = 125ºC  
V
V
I D = 102A  
I D = 51A  
TJ = 25ºC  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
100  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
30  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
t r  
t
d(on) - - - -  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
tf  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 75V  
RG = 3.3Ω, VGS = 10V  
DS = 75V  
I D = 102A  
V
V
I D = 51A  
I D = 51A  
I D = 102A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
280  
240  
200  
160  
120  
80  
160  
140  
120  
100  
80  
26  
25  
24  
23  
22  
21  
20  
42  
38  
34  
30  
26  
22  
18  
tf  
td(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 75V  
TJ = 125ºC  
V
tf  
td(off) - - - -  
RG = 3.3Ω, VGS = 10V  
I D = 102A  
VDS = 75V  
I D = 51A  
60  
40  
40  
TJ = 25ºC  
0
20  
2
4
6
8
10  
12  
14  
16  
18  
20  
50 55 60 65 70 75 80 85 90 95 100 105  
RG - Ohms  
ID - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA102N15T IXTH102N15T  
IXTP102N15T IXTQ102N15T  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: F_102N15T(6E)90-30-08  
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