IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
6.5
11
S
Ciss
Coss
Crss
2840
275
42
pF
pF
pF
td(on)
tr
td(off)
tf
20
28
52
44
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
50
17
18
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.42 °C/W
°C/W
(TO-3P & TO-247)
(TO-220)
0.25
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
- 10
- 40
- 3
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = - 5A, VGS = 0V, Note 1
trr
QRM
IRM
414
5.90
- 28.6
ns
μC
A
IF = - 5A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
