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IXTF02N450

型号：

IXTF02N450

描述：

高压功率MOSFET[ High Voltage Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

161 K

下载PDF手册
Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4500V  
= 200mA  
IXTF02N450  
RDS(on) ≤ 750Ω  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
N-Channel Enhancement Mode  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
1
2
Isolated Tab  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
4500  
4500  
V
V
5
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
1 = Gate  
2 = Source  
5 = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
200  
600  
mA  
mA  
PD  
TC = 25°C  
78  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4500V~ Electrical Isolation  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
V~  
g
VISOL  
Weight  
50/60Hz, 1 Minute  
4500  
6
Advantages  
z
High Voltage Package  
Easy to Mount  
Space Savings  
High Power Density  
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
6.5  
±100 nA  
μA  
Applications  
VGS(th)  
IGSS  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
4.0  
V
z
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
z
z
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.5kV  
5
z
Laser and X-Ray Generation Systems  
10 μA  
VDS = 3.6kV  
Note 2, TJ = 100°C  
25  
μA  
RDS(on)  
VGS = 10V, ID = 10mA, Note 1  
750  
Ω
DS100499(10/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTF02N450  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS i4-PakTM (HV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 60V, ID = 30mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
60  
100  
mS  
Ciss  
Coss  
Crss  
256  
19  
pF  
pF  
pF  
5.5  
RGi  
76  
Ω
td(on)  
tr  
td(off)  
tf  
17  
48  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 500V, ID = 100mA  
RG = 10Ω (External)  
28  
143  
Pin 1 = Gate  
Pin 2 = Soure  
Pin 3 = Drain  
Pin 4 = Isolated  
Qg(on)  
Qgs  
10.4  
3.4  
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
5.0  
RthJC  
RthCS  
1.6 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
200 mA  
800 mA  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
1.5  
V
IF = 200mA, -di/dt = 50A/μs, VR = 100V  
1.6  
μs  
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Part must be heatsunk for high-temp IDSS measurement.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTF02N450  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
7V  
60  
40  
20  
6V  
6V  
0
0
0
50  
100  
150  
200  
250  
300  
350  
400  
0
20  
40  
60  
80  
100  
120  
140  
160  
350  
350  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100mA Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
VGS = 10V  
7V  
I D = 200mA  
I D = 100mA  
6V  
5V  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
300  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 100mA Value vs.  
Drain Current  
220  
200  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - MilliAmperes  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTF02N450  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
500  
400  
300  
200  
100  
0
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
125ºC  
- 40ºC  
0
0
50  
100  
150  
200  
250  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
VGS - Volts  
ID - MilliAmperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
600  
500  
400  
300  
200  
100  
0
VDS = 1000V  
I D = 100mA  
I G = 1mA  
TJ = 125ºC  
TJ = 25ºC  
0
1
2
3
4
5
6
7
8
9
10  
11  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1,000  
100  
10  
10  
1
= 1 MHz  
f
C
iss  
0.1  
C
oss  
rss  
0.01  
0.001  
C
1
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTF02N450  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
RDS(on) Limit  
RDS(on) Limit  
1ms  
1ms  
DC  
10ms  
10ms  
TJ = 150ºC  
TJ = 150ºC  
TC = 75ºC  
DC  
100ms  
TC = 25ºC  
Single Pulse  
Single Pulse  
100ms  
100  
1,000  
10,000  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_02N450(H5)10-31-12-A  
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