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IXTF1N450

型号：

IXTF1N450

描述：

高压功率MOSFET[ High Voltage Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

158 K

下载PDF手册
Preliminary Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4500V  
= 0.9A  
IXTF1N450  
RDS(on) ≤ 95Ω  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
N-Channel Enhancement Mode  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
1
2
Isolated Tab  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
4500  
4500  
V
V
5
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
1 = Gate  
2 = Source  
5 = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
0.9  
3.0  
A
A
PD  
TC = 25°C  
165  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4500V~ Electrical Isolation  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
z
z
z
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
V~  
g
VISOL  
Weight  
50/60Hz, 1 Minute  
4500  
6
Advantages  
z
High Voltage Package  
Easy to Mount  
Space Savings  
High Power Density  
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
Applications  
VGS(th)  
IGSS  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
3.5  
6.0  
V
z
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
±100 nA  
z
z
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.5kV  
10 μA  
50 μA  
μA  
z
Laser and X-Ray Generation Systems  
VDS = 3.6kV  
Note 2, TJ = 100°C  
25  
RDS(on)  
VGS = 10V, ID = 50mA, Note 1  
95  
Ω
DS100501B(04/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTF1N450  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS i4-PakTM (HV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 200mA, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
0.28  
0.46  
S
Ciss  
Coss  
Crss  
1730  
78  
pF  
pF  
pF  
28  
RGi  
21  
Ω
td(on)  
tr  
td(off)  
tf  
34  
60  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 500V, ID = 0.5A  
RG = 10Ω (External)  
58  
127  
Pin 1 = Gate  
Pin 2 = Soure  
Pin 3 = Drain  
Pin 4 = Isolated  
Qg(on)  
Qgs  
40  
10  
20  
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5A  
Qgd  
RthJC  
RthCS  
0.77 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
1
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 1A, VGS = 0V, Note 1  
IF = 1A, -di/dt = 50A/μs, VR = 100V  
5
2.0  
V
1.75  
μs  
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Part must be heatsunk for high-temp IDSS measurement.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTF1N450  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VGS = 10V  
9V  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VGS = 10V  
8V  
8V  
7V  
7V  
6.5V  
6V  
6V  
0
50  
100  
150  
200  
250  
300  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
VGS = 10V  
7V  
VGS = 10V  
I D = 1A  
I D = 0.5A  
6V  
5V  
0
20  
40  
60  
80  
100  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTF1N450  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VDS = 1000V  
I D = 500mA  
I G = 1mA  
TJ = 125ºC  
TJ = 25ºC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10.00  
1.00  
0.10  
0.01  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
25µs  
100µs  
C
C
C
iss  
1ms  
oss  
rss  
10ms  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
10  
100  
1,000  
10,000  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTF1N450  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N450(H7)10-09-12  
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