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IXTP230N075T2

型号：

IXTP230N075T2

描述：

TrenchT2TM功率MOSFET[ TrenchT2TM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

207 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM  
Power MOSFET  
IXTA230N075T2  
IXTP230N075T2  
VDSS = 75V  
ID25 = 230A  
RDS(on) ≤ 4.2mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
75  
75  
V
V
G
S
VDGR  
VGSM  
Transient  
± 20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
230  
75  
A
A
A
TO-220 (IXTP)  
700  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
115  
850  
480  
A
mJ  
W
EAS  
PD  
G
D
(TAB)  
S
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
G = Gate  
D
= Drain  
TJM  
Tstg  
S = Source  
TAB = Drain  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z International standard packages  
z 175°C Operating Temperature  
z High current handling capability  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
z
Low RDS(on)  
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
75  
V
V
Applications  
2.0  
4.0  
z Electrical Motor Drive  
z High current switching DC to DC  
converter  
±200 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
150 μA  
4.2 mΩ  
RDS(on)  
VGS = 10V, ID = 50A, Notes 1, 2  
DS100042(09/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA230N075T2  
IXTP230N075T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
85  
S
Ciss  
Coss  
Crss  
10.5  
1165  
125  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
23  
18  
33  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
Qg(on)  
Qgs  
178  
53  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
41  
RthJC  
RthCH  
0.31 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
230  
900  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
TO-220 (IXTP) Outline  
trr  
66  
4.4  
ns  
A
IF = 115A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 37V  
145  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA230N075T2  
IXTP230N075T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
VGS = 15V  
10V  
9V  
320  
280  
240  
200  
160  
120  
80  
VGS = 15V  
10V  
9V  
8V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
60  
40  
40  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
175  
175  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
2.0  
300  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 115A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 230A  
7V  
I D = 115A  
6V  
60  
40  
5V  
20  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 115A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
External Lead Current Limit  
TJ = 175ºC  
VGS = 10V  
15V - - - -  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
50  
100  
150  
200  
250  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA230N075T2  
IXTP230N075T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.5  
0.4  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 38V  
I D = 115A  
I
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
RDS(on) Limit  
= 1 MHz  
f
C
25µs  
iss  
100  
10  
1
100µs  
External Lead Current Limit  
C
oss  
1ms  
10ms  
C
rss  
DC  
100ms  
1
10  
100  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_230N075T2(V6)09-18-08  
IXTA230N075T2  
IXTP230N075T2  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
26  
24  
22  
20  
18  
16  
14  
12  
10  
RG = 2Ω  
RG = 2ꢀ  
VGS = 10V  
VDS = 38V  
VGS = 10V  
DS = 38V  
V
TJ = 25ºC  
I D = 230A  
I D = 115A  
TJ = 125ºC  
110 120 130 140 150 160 170 180 190 200 210 220 230  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
65  
t r  
t
d(on) - - - -  
t f  
RG = 2Ω, VGS = 10V  
t
d(off) - - - -  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
TJ = 125ºC, VGS = 10V  
DS = 38V  
I D = 230A, 115A  
V
VDS = 38V  
I D = 115A  
I D = 230A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
280  
240  
200  
160  
120  
80  
280  
240  
200  
160  
120  
80  
26  
60  
tf  
RG = 2ꢀ, VGS = 10V  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
24  
22  
20  
18  
16  
14  
12  
10  
55  
50  
45  
40  
35  
30  
25  
20  
TJ = 125ºC, VGS = 10V  
DS = 38V  
VDS = 38V  
V
TJ = 125ºC  
I D = 115A  
40  
40  
TJ = 25ºC  
I D = 230A  
0
0
110 120 130 140 150 160 170 180 190 200 210 220 230  
2
4
6
8
10  
12  
14  
16  
ID - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA230N075T2  
IXTP230N075T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_230N075T2(V6)09-18-08  
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