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IXTH130N20T

型号：

IXTH130N20T

描述：

N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

132 K

下载PDF手册
Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
IXTH130N20T  
VDSS = 200V  
ID25 = 130A  
RDS(on) ≤ 16mΩ  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1MΩ  
200  
200  
V
V
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
130  
75  
320  
A
A
A
G
(TAB)  
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
4
1.0  
A
J
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
dv/dt  
Pd  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
10  
V/ns  
W
830  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13/10 Nm/lb.in  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Weight  
6
g
Advantages  
z
Easy to mount  
Space savings  
High Power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
z DC-DC converters  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
200  
V
V
z
Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
2.5  
5.0  
± 200  
nA  
z AC motor control  
z High speed power switching  
applications  
IDSS  
VDS = VDSS  
VGS = 0V  
25  
500  
μA  
μA  
TJ = 150°C  
z DC choppers  
z Battery chargers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1  
16 mΩ  
DS99846(06/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH130N20T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V; ID = 60A, Note 1  
70  
120  
S
Ciss  
Coss  
Crss  
8800  
970  
pF  
pF  
pF  
∅ P  
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
122  
td(on)  
tr  
td(off)  
tf  
Resistive Switching, 25°C  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2.0Ω (External)  
25  
18  
57  
22  
ns  
ns  
ns  
ns  
e
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
150  
44  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
42  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
∅P 3.55  
3.65  
.140 .144  
Symbol  
Test Conditions  
Characteristic Values  
Q
5.89  
6.40 0.232 0.252  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
130  
320  
1.0  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
A
A
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 50A, VGS = 0V, Note 1  
V
IF = 65A, -di/dt = 100A/μs  
150  
ns  
VR = 100V, VGS = 0V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %;  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from data gathered during objective characterizations of preliminary engineering lots; but  
also may yet contain some information supplied during a pre-production design evaluation. IXYS  
reserves the right to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH130N20T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
130  
120  
110  
100  
90  
280  
240  
200  
160  
120  
80  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
8V  
7V  
7V  
80  
70  
6V  
60  
50  
6V  
5V  
40  
30  
20  
40  
5V  
10  
0
0
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 65A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
130  
120  
110  
100  
90  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 130A  
D
6V  
80  
70  
I
= 65A  
D
60  
50  
40  
5V  
30  
20  
10  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 65A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
External Lead Current Limit  
V
= 10V  
GS  
T = 175ºC  
J
T = 25ºC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
40  
80  
120  
160  
200  
240  
280  
ID - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH130N20T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
T = - 40ºC  
J
25ºC  
T = 150ºC  
J
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
3.4  
3.8  
4.2  
4.6  
5
5.4  
5.8  
6.2  
6.6  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 100V  
DS  
I
I
= 25A  
D
G
= 10mA  
T = 150ºC  
J
T
J
= 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
15  
30  
45  
60  
75  
90  
105 120 135 150  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
0.00  
f = 1 MHz  
C
iss  
C
C
oss  
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH130N20T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
R
= 2  
Ω
G
V
V
= 15V  
GS  
DS  
T = 25ºC  
J
= 100V  
R
V
V
= 2  
Ω
G
= 15V  
GS  
DS  
= 100V  
I
= 130A  
D
I
= 65A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
30  
40  
50  
60  
70  
80  
90  
100 110 120 130  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
45  
30  
29  
28  
27  
26  
25  
24  
23  
25  
80  
75  
70  
65  
60  
55  
50  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
t r  
td(on)  
t f  
R
td(off)  
- - - -  
= 2 , V = 15V  
- - - -  
TJ = 125ºC, V = 15V  
40  
35  
30  
25  
20  
15  
10  
Ω
GS  
G
GS  
V
= 100V  
V
= 100V  
DS  
DS  
I
= 130A  
D
I
= 130A, 65A  
D
I
= 65A  
D
I
= 130A  
D
2
3
4
5
6
7
8
9
10  
25 35 45 55 65 75 85 95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
28  
26  
24  
22  
20  
18  
16  
14  
12  
90  
85  
80  
75  
70  
65  
60  
55  
50  
90  
200  
180  
160  
140  
120  
100  
80  
t f  
R
td(off)  
- - - -  
VGS = 15V  
tf  
td(off)  
- - - -  
80  
70  
60  
50  
40  
30  
20  
10  
= 2  
,
T = 125ºC, VGS = 15V  
J
Ω
G
VDS = 100V  
VDS = 100V  
T = 25ºC  
J
I
= 65A, 130A  
D
TJ = 125ºC  
60  
T = 25ºC  
J
40  
30  
40  
50  
60  
70  
80  
90 100 110 120 130  
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF: T_130N20T(8W) 06-07-07  
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