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IXTN62N50L

型号：

IXTN62N50L

描述：

N沟道增强模式额定雪崩快速内在二极管[ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

136 K

下载PDF手册
LinearTM Power MOSFET  
w/Extended FBSOA  
VDSS = 500V  
ID25 = 62A  
RDS(on) ≤ 100mΩ  
IXTN62N50L  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
V
V
V
V
S
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
500  
± 30  
± 40  
D
Transient  
G = Gate  
D = Drain  
S = Source  
ID25  
IDM  
TC = 25°C  
62  
A
A
TC = 25°C, Pulse Width Limited by TJM  
150  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
80  
5
A
J
EAS  
PD  
TJ  
800  
W
°C  
°C  
°C  
Features  
-55 ... +150  
150  
z
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
TJM  
Tstg  
z
-55 ... +150  
z
Isolation  
Fast Intrinsic Diode  
Extended FBSOA  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
z
IISOL ≤ 1mA,  
t = 1s  
z
z
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z
z
Weight  
30  
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ. Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
z
Programmable Loads  
DC-DC Converters  
Current Regulators  
Battery Chargers  
DC Choppers  
Temperature and Lighting  
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
5.5  
z
z
± 200 nA  
50 μA  
z
z
IDSS  
z
TJ = 125°C  
1
mA  
Controls  
RDS(on)  
VGS = 20V, ID = 0.5 • ID25, Note 1  
100 mΩ  
DS99812A(11/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTN62N50L  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
10  
15  
20  
S
Ciss  
Coss  
Crss  
11.5  
1460  
210  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
36  
85  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
110  
75  
RG = 2Ω (External)  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
550  
115  
180  
nC  
nC  
nC  
VGS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.156 °C/W  
°C/W  
0.05  
Safe Operating Area Specification  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min.  
Typ.  
Max.  
VDS = 400V, ID = 750mA, TC = 90°C  
300  
W
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
IS  
VGS = 0V  
62  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.5  
V
500  
ns  
IF = IS, VGS = 0V  
-di/dt = 100A/μs, VR = 100V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTN62N50L  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
VGS = 20V  
VGS = 20V  
16V  
140  
120  
100  
80  
60  
50  
40  
30  
20  
10  
0
16V  
14V  
14V  
12V  
12V  
10V  
9V  
60  
40  
10V  
9V  
20  
8V  
7V  
8V  
7V  
0
0
1
2
3
4
5
6
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 31A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
14V  
60  
VGS = 10V  
50  
40  
30  
20  
10  
0
12V  
10V  
I D = 62A  
I D = 31A  
9V  
8V  
7V  
6V  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 31A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
VGS = 20V  
TJ = 125ºC  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTN62N50L  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
4
5
6
7
8
9
10  
11  
12  
13  
14  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
240  
200  
160  
120  
80  
20  
18  
16  
14  
12  
10  
8
VDS = 250V  
I D = 31A  
TJ = 25ºC  
I
G = 10mA  
TJ = 125ºC  
6
4
40  
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
100,000  
10,000  
1,000  
100  
1
= 1 MHz  
f
C
iss  
0.1  
C
oss  
0.01  
0.001  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTN62N50L  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 90ºC  
1000  
100  
10  
1000  
100  
10  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
DC  
1
1
DC  
TJ = 150ºC  
C = 90ºC  
Single Pulse  
TJ = 150ºC  
T
TC = 25ºC  
Single Pulse  
0.1  
0.1  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_62N50L(9N) 11-04-11-B  
厂商 型号 描述 页数 下载

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