请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTN600N04T2

型号：

IXTN600N04T2

描述：

TrenchT2 GigaMOS功率MOSFET N沟道增强型雪崩额定快速内在二极管[ TrenchT2 GigaMOS Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

182 K

下载PDF手册
TrenchT2TM GigaMOSTM  
Power MOSFET  
VDSS = 40V  
ID25 = 600A  
RDS(on) ≤ 1.3mΩ  
IXTN600N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC, SOT-227  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
VDGR  
VGSM  
ID25  
IL(RMS)  
IDM  
Transient  
±20  
V
A
S
TC = 25°C (Chip Capability)  
600  
D
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
200  
1800  
A
A
G = Gate  
D = Drain  
S = Source  
IA  
TC = 25°C  
TC = 25°C  
200  
3
A
J
EAS  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
PD  
TC = 25°C  
940  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
z 175°C Operating Temperature  
z Isolation Voltage 2500 V~  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
z Avalanche Rated  
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
40  
V
V
Applications  
1.5  
3.5  
z DC-DC Converters and Off-Line UPS  
z Primary-Side Switch  
z High Speed Power Switching  
Applications  
±200 nA  
IDSS  
10 μA  
1 mA  
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
1.3 mΩ  
DS100172B(10/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTN600N04T2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXTN) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
90  
150  
S
Ciss  
Coss  
Crss  
40  
6400  
1470  
nF  
pF  
pF  
RGI  
td(on)  
tr  
Gate Input Resistance  
1.32  
40  
Ω
ns  
ns  
ns  
ns  
Resistive Switching Times  
20  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
td(off)  
tf  
90  
RG = 1Ω (External)  
250  
(M4 screws (4x) supplied)  
Qg(on)  
Qgs  
590  
127  
163  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
RthJC  
RthCS  
0.16 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
600  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1800  
1.2  
trr  
IRM  
100  
3.3  
ns  
A
IF = 150A, VGS = 0V  
-di/dt = 100A/μs  
VR = 20V  
QRM  
165  
nC  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTN600N04T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
7V  
10V  
7V  
6V  
6V  
5V  
5V  
4.5V  
4V  
4.5V  
4V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.7  
350  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 150ºC  
Fig. 4. Normalized RDS(on) vs. Junction Temperature  
350  
300  
250  
200  
150  
100  
50  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
7V  
I
< 600A  
D
6V  
5V  
4V  
3V  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. Normalized RDS(on) vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
220  
VGS = 10V  
15V  
200  
180  
160  
140  
120  
100  
80  
External Lead Current Limit  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
50  
100  
150  
200  
250  
300  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTN600N04T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
40  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
600  
100  
2.0  
0.2  
0
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 20V  
I
I
D = 300A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
100  
200  
300  
400  
500  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
10  
100.0  
10.0  
1.0  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
External Lead Limit  
C
oss  
1ms  
10ms  
C
rss  
100ms  
T
= 175ºC  
= 25ºC  
J
DC  
T
C
= 1 MHz  
5
f
Single Pulse  
0.1  
1
10  
15  
20  
25  
30  
35  
0.1  
1
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTN600N04T2  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
RG = 1ꢀ , VGS = 10V  
VDS = 20V  
RG = 1Ω , VGS = 10V  
VDS = 20V  
TJ = 125ºC  
I D = 200A  
I D = 100A  
TJ = 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
600  
500  
400  
300  
200  
100  
0
140  
400  
350  
300  
250  
200  
150  
100  
50  
160  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 20V  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 20V  
150  
140  
130  
120  
110  
100  
90  
120  
100  
80  
V
V
I D = 200A  
I D = 200A  
I D = 100A  
I D = 100A  
60  
40  
0
80  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
400  
350  
300  
250  
200  
150  
100  
50  
200  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 20V  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 20V  
I D = 200A, 100A  
V
V
TJ = 125ºC, 25ºC  
60  
0
40  
1
2
3
4
5
6
7
8
9
10  
40  
60  
80  
100  
120  
140  
160  
180  
200  
ID - Amperes  
RG - Ohms  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTN600N04T2  
Fig. 19. Maximum Transient Thermal Impedance  
.sadgsfgsf  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_600N04T2 (V9)11-05-09  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.201256s