e
M O S FIECT
SMD Type
DIP Type
SDSSMIMMPDDDTTyTTpyyypeppeee
IC
MMOOSSFFIECETT
Product specification
KXP20N15
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
BVDSS
VGS(th)
IGSS
Test conditions
VGS = 0 V, ID = 250 μA
Min
150
2.0
Typ Max
Unit
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body leakage current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Total Gate Charge
4.0
±100
10
V
VDS = VGS, ID = 250 μA
VGS = ±20 V, VDS = 0 V
VDS =150 V, VGS = 0 V
nA
IDSS
μA
Ω
RDS(on) VGS = 10 V, ID = 10A
0.13
gFS
Qg
VDS = 13 V, ID = 10 A
8
11
S
39.1 55.9
7.5
VDS = 120V ,VGS = 10 V , ID=20A
nC
pF
Gate-Source Charge
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Gate-Drain Charge
22
Input Capacitance
1133 1627
VDS =25V ,VGS = 0 , f = 1.0MHz
Output Capacitance
332
105
11
474
174
25
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off Delay Time
77
153
67
VDD = 75V ,VGS=10V,RG = 9.1Ω ,
ID = 20A
ns
td(off)
tf
33
49
97
Turn-Off Fall Time
Drain-Source Diode Forward Voltage
VSD
trr
VGS = 0 V, IS = 20A
1.5
V
ns
A
VGS = 0 V, IS = 20A,dIS / dt = 100 A/μs
160
Reverse Recovery Time
IS
20
Maximum Body-Diode Continuous Current
■ Marking
Marking
20N15
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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