SMD Type
Product specification
KXT5551 (CXT5551)
SOT-89
Unit: mm
+0.1
-0.1
+0.1
1.50
-0.1
4.50
1.80
+0.1
-0.1
Features
High current (max. 500mA).
Low voltage (max. 150 V).
+0.1
0.48
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
1. Base
+0.1
-0.1
3.00
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
180
160
6
V
V
Collector current (DC)
power dissipation
600
1.2
104
150
mA
W
PD
thermal resistance Junction-to-ambient
Junction temperature
R
JA
Tj
Tstg
/W
Storage temperature
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
180
160
6.0
Typ
Max
Unit
V
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
VCBO
VCEO
VEBO
IC=100
IC=1.0mA
IE=10
A
V
V
A
VCB = 120 V, IE = 0
50
50
nA
A
Collector cutoff current
ICBO
VCB = 120 V, TA=100
IC = 1.0 mA; VCE = 5.0 V
IC = 10mA; VCE = 5.0V
IC = 50 mA; VCE = 5.0V
IC = 10 mA; IB = 1.0mA
IC = 50 mA; IB = 5.0mA
IC = 10 mA; IB = 1.0mA
IC = 50 mA; IB = 5.0mA
80
80
30
DC current gain
hFE
250
0.15
0.20
1.00
1.00
6.0
V
V
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
Output capacitance
Transition frequency
Cob
fT
VCB = 10 V, IE = 0,f=1.0MHz
IC = 10 mA; VCE =10V; f = 100 MHz
pF
MHz
100
300
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