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IXTQ240N055T

型号：

IXTQ240N055T

描述：

TrenchMV功率MOSFET[ TrenchMV Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

210 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTH240N055T  
IXTQ240N055T  
VDSS = 55  
ID25 = 240  
RDS(on) ≤ 3.6 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
55  
55  
V
V
VGSM  
Transient  
20  
V
ID25  
ILRMS  
IDM  
TC = 25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
240  
75  
650  
A
A
A
G
(TAB)  
D
S
IAR  
EAS  
TC =25°C  
TC = 25° C  
25  
1.0  
A
J
TO-3P (IXTQ)  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 5 Ω  
3
V/ns  
TC =25°C  
480  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-40 ... +175  
°C  
°C  
°C  
G
D
S
(TAB)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
Features  
ꢀUltra-low On Resistance  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
55  
V
V
ꢀ
ꢀ
2.0  
4.0  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
Applications  
ꢀ
Automotive  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
µA  
µA  
- Motor Drives  
- High Side Switch  
- 12VBattery  
TJ = 150° C  
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
2.7  
3.6 m Ω  
- ABS Systems  
ꢀ
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching  
ꢀ
ꢀ
Applications  
DS99715 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTH240N055T  
IXTQ240N055T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247AD Outline  
(TJ = 25° C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
75  
132  
S
Ciss  
Coss  
Crss  
7600  
1240  
260  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
40  
54  
63  
75  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
170  
32  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
48  
RthJC  
RthCS  
0.31°C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
.780 .800  
.177  
TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
IS  
VGS = 0 V  
240  
A
A
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 50 A, VGS = 0 V, Note 1  
650  
1.2  
V
TO-3P (IXTQ) Outline  
IF = 25 A, -di/dt = 100 A/µs  
70  
ns  
VR = 25 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTH240N055T  
IXTQ240N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
330  
300  
270  
240  
210  
180  
150  
120  
90  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
60  
5V  
20  
30  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 120A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 240A  
D
6V  
5V  
I
= 120A  
D
60  
40  
20  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 120A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.2  
2
140  
120  
100  
80  
External Lead Current Limit for TO-263 (7-Lead)  
T = 175ºC  
J
1.8  
1.6  
1.4  
1.2  
1
V
= 10V  
15V  
GS  
- - - -  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
60  
40  
T = 25ºC  
J
20  
0
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTH240N055T  
IXTQ240N055T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
270  
240  
210  
180  
150  
120  
90  
T
J
= - 40ºC  
25ºC  
150ºC  
T
J
= 150ºC  
25ºC  
- 40ºC  
60  
60  
40  
30  
20  
0
0
3
0.4  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
0
40  
80  
120  
160  
200  
240  
280  
180  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
= 150ºC  
J
T
= 25ºC  
J
60  
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH240N055T  
IXTQ240N055T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
60  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
R
= 5  
Ω
G
V
V
= 10V  
= 30V  
GS  
DS  
T = 25ºC  
J
R
V
V
= 5  
Ω
G
= 10V  
= 30V  
GS  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
66  
62  
58  
54  
50  
46  
42  
38  
34  
78  
100  
96  
92  
88  
84  
80  
76  
72  
68  
64  
60  
t r  
td(on)  
t f  
R
td(off)  
- - - -  
- - - -  
76  
74  
72  
70  
68  
66  
64  
62  
60  
58  
TJ = 125ºC, V = 10V  
= 5 , V = 10V  
GS  
G
Ω
GS  
I
= 50A  
25A  
D
V
= 30V  
V
= 30V  
DS  
DS  
I
= 25A  
D
I
= 50A  
25A  
D
I
= 50A  
D
60  
40  
20  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75 85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
78  
76  
74  
72  
70  
68  
66  
64  
62  
60  
58  
100  
96  
92  
88  
84  
80  
76  
72  
68  
64  
60  
225  
200  
175  
150  
125  
100  
75  
340  
300  
260  
220  
180  
140  
100  
60  
t f  
td(off)  
- - - -  
T = 125ºC, VGS = 10V  
J
I
= 25A  
D
VDS = 30V  
TJ = 25ºC, 125ºC  
I
= 50A  
D
tf  
td(off)  
- - - -  
= 5 , VGS = 10V  
R
G
Ω
V
DS = 30V  
T = 25ºC, 125ºC  
J
50  
4
6
8
10  
12  
14  
16  
18  
20  
24  
28  
32  
36  
40  
44  
48  
RG - Ohms  
ID - Amperes  
IXYS REF: T_240N055T (61) 11-16-06-B.xls  
© 2006 IXYS CORPORATION All rights reserved  
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