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IXTQ44N50P

型号：

IXTQ44N50P

描述：

PolarHV功率MOSFET[ PolarHV Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

154 K

下载PDF手册
PolarHVTM  
Power MOSFET  
IXTQ 44N50P  
VDSS = 500 V  
ID25 = 44 A  
RDS(on) ≤ 140 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P (IXTQ)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
ID25  
IDM  
TC =25° C  
TC = 25° C, pulse width limited by TJM  
44  
110  
A
A
D
(TAB)  
S
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
44  
55  
1.7  
A
mJ  
J
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 10 Ω  
,
10  
V/ns  
TC =25° C  
650  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
l
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
l
Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque(TO-247)  
1.13/10 Nm/lb.in.  
Weight  
6
g
Advantages  
l
Easy to mount  
Space savings  
High power density  
l
Symbol  
Test Conditions  
Characteristic Values  
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
500  
V
V
3.0  
5.0  
10  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
140 mΩ  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
DS99372E(03/06)  
© 2006 IXYS All rights reserved  
IXTQ 44N50P  
TO-3P (IXTQ) Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
20  
32  
S
Ciss  
Coss  
Crss  
5440  
639  
40  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
27  
75  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 3 Ω (External)  
Qg(on)  
Qgs  
98  
35  
30  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCS  
0.19° C/W  
° C/W  
(TO-3P)  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
Repetitive  
44  
A
A
V
ISM  
110  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 22 A  
400  
ns  
-di/dt = 100 A/µs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXTQ 44N50P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
7V  
GS  
V
= 10V  
GS  
8V  
7V  
6V  
6V  
5V  
5V  
0
0
1
2
3
4
5
6
7
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
5V  
I
= 44A  
D
I
= 22A  
1.6  
1.2  
0.8  
0.4  
D
0
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
50  
V
= 10V  
GS  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= 125ºC  
T
J
= 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
TC - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXTQ 44N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
140  
120  
100  
80  
V
= 250V  
DS  
9
8
7
6
5
4
3
2
1
0
I
I
= 22A  
D
G
= 10mA  
T
= 125ºC  
J
60  
T
J
= 25ºC  
40  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
10,000  
1,000  
100  
T
T
= 150ºC  
= 25ºC  
J
C
C
C
iss  
R
Limit  
DS(on)  
25µs  
oss  
100µs  
1ms  
DC  
10ms  
C
rss  
f = 1 MHz  
5
1
10  
10  
100  
1000  
0
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 44N50P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
IXYSREF: T_44N50P(8J)03-21-06-B.xls  
厂商 型号 描述 页数 下载

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LITTELFUSE

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IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

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