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IXTX200N10L2

型号：

IXTX200N10L2

描述：

直线L2功率MOSFET W /扩展FBSOA[ Linear L2 Power MOSFET w/ Extended FBSOA ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

139 K

下载PDF手册
Advance Technical Information  
Linear L2TM Power  
MOSFET w/ Extended  
FBSOA  
VDSS  
ID25  
= 100V  
= 200A  
IXTK200N10L2  
IXTX200N10L2  
RDS(on) < 11mΩ  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
Avalanche Rated  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
100  
100  
V
V
Tab  
S
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247(IXTX)  
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
200  
160  
500  
A
A
A
Lead Current Limit, (RMS)  
TC = 25°C, Pulse Width Limited by TJM  
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
5
A
J
G
D
S
Tab  
PD  
TC = 25°C  
1040  
W
TJ  
-55...+150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55...+150  
TL  
1.6mm (0.063 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
FC  
Mounting Torque (IXTK)  
Mounting Force (IXTX)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Designed for Linear Operation  
z Avalanche Rated  
z Guaranteed FBSOA at 75°C  
20..120 / 4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 3mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
100  
V
z Solid State Circuit Breakers  
z Soft Start Controls  
z Linear Amplifiers  
z Programmable Loads  
z Current Regulators  
2.0  
4.5  
V
±200 nA  
IDSS  
10 μA  
250 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
11 mΩ  
DS100239(2/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTK200N10L2  
IXTX200N10L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXTK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 60A, Note 1  
55  
73  
90  
S
Ciss  
Coss  
Crss  
23  
3200  
610  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
40  
225  
127  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
1 - Gate  
2 - Drain  
3 - Source  
4 - Drain  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
Qg(on)  
Qgs  
540  
115  
226  
nC  
nC  
nC  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
0.15  
D
25.91 26.16  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
Safe-Operating-Area Specification  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Symbol  
SOA  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
VDS = 100V, ID = 6.25A, TC = 75°C, tp = 5s 625  
W
PLUS 247TM (IXTX) Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
200  
800  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
IRM  
QRM  
245  
24.4  
3.0  
ns  
A
μC  
IF = 100A, -di/dt = 100A/μs,  
VR = 50V, VGS = 0V  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK200N10L2  
IXTX200N10L2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 20V  
14V  
VGS = 20V  
12V  
10V  
12V  
10V  
8V  
8V  
7V  
7V  
6V  
60  
6V  
4V  
40  
20  
0
0
0.0  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
2
4
6
8
10  
12  
14  
16  
18  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 100A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
VGS = 10V  
14V  
12V  
10V  
I D = 200A  
8V  
I D = 100A  
60  
6V  
4V  
40  
20  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 100A Value vs.  
Drain Current  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
20V  
TJ = 125ºC  
External Lead Current Limit  
- - - -  
60  
TJ = 25ºC  
40  
20  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTK200N10L2  
IXTX200N10L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
60  
25ºC  
- 40ºC  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
800  
10  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
320  
280  
240  
200  
160  
120  
80  
VDS = 50V  
I
I
D = 100A  
G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
40  
2
0
0
600
100  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
200  
300  
400  
500  
700  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
ggg  
0.200  
0.100  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
iss  
0.010  
C
C
oss  
rss  
0.001  
0.00001  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK200N10L2  
IXTX200N10L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25µs  
25µs  
100µs  
100µs  
External Lead Limit  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
T
TC = 25ºC  
Single Pulse  
1
1
1
10  
100  
1
10  
VDS - Volts  
100  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_200N10L2(9R)1-26-10  
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