请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

QQ咨询

一对一服务 找料无忧

专属客服：823711899

服务时间

周一至周六 8:30-17:30

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

IXTP12N50PM

型号：

IXTP12N50PM

描述：

PolarTM功率MOSFET[ PolarTM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

119 K

下载PDF手册
PolarTM Power MOSFET  
VDSS = 500V  
ID25 = 6A  
IXTP12N50PM  
RDS(on) ≤ 500mΩ  
(Electrically Isolated Tab)  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
OVERMOLDED TO-220  
(IXTP...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
500  
500  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
G
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
6
30  
A
A
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
12  
600  
A
mJ  
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ =150°C  
TC = 25°C  
10  
50  
V/ns  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
ꢀPlastic overmolded tab for electrical  
isolation  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
ꢀInternational standard package  
ꢀUnclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
2.5  
g
ꢀLow package inductance  
- easy to drive and to protect  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
ꢀ
(TJ = 25°C, unless otherwise specified)  
Easy to mount  
ꢀ
Space savings  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
500  
V
V
3.0  
5.5  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±100 nA  
VDS = VDSS  
VGS = 0V  
5 μA  
250 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 6A, Note 1  
500 mΩ  
© 2008 IXYS CORPORATION, All rights reserved  
DS99448F(04/08)  
IXTP12N50PM  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOLATED TO-220 (IXTP...M)  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10V, ID = 6A, Note 1  
7.5  
13  
S
Ciss  
Coss  
Crss  
1830  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
182  
16  
1
2
3
td(on)  
tr  
td(off)  
tf  
22  
27  
65  
20  
ns  
ns  
ns  
ns  
VGS = 10V, VDS = 0.5  
ꢀ
VDSS, ID = 6A  
RG = 10Ω (External)  
Qg(on)  
Qgs  
29  
11  
10  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
ꢀ
VDSS, ID = 6A  
Qgd  
Terminals: 1 - Gate  
2 - Drain (Collector)  
RthJC  
2.5 °C/W  
3 - Source (Emitter)  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
VGS = 0V  
Min.  
Typ.  
Max.  
12  
A
A
V
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
1.5  
300  
VSD  
trr  
QRM  
IRM  
ns  
μC  
A
IF = 6A, -di/dt = 150A/μs,  
VR = 100V, VGS = 0V  
2.8  
18.2  
Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTP12N50PM  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
@ 25 C  
º
12  
10  
8
30  
27  
24  
21  
18  
15  
12  
9
V
GS  
= 10V  
V
= 10V  
8V  
GS  
7V  
6
7V  
4
6
2
6V  
6V  
4
3
0
0
0
1
2
3
5
6
7
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
V
- Volts  
D S  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Normalized to ID = 6A Value  
vs. Junction Temperature  
@ 125 C  
º
12  
10  
8
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
7V  
GS  
V
=10 V  
GS  
I = 12A  
D
6
I
D
= 6A  
6V  
4
2
5V  
8
0
0
2
4
6
VD S - Volts  
10  
12  
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 5. RDS(on) Normalized to ID = 6A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
7
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
6
5
4
3
2
1
0
V
GS  
= 10V  
T = 125 C  
º
J
T = 25 C  
º
J
0
3
6
9
12 15 18 21 24 27 30  
I D - Amperes  
-50  
-25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
© 2008 IXYS CORPORATION, All rights reserved  
IXTP12N50PM  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
27  
24  
21  
18  
15  
12  
9
T = - 40 C  
º
J
25 C  
º
125 C  
º
T = 125 C  
º
25ºC  
- 40ºC  
J
6
6
4
3
2
0
0
0
2
4
6
8
10 12 14 16 18 20  
4.5  
5.0  
5.5 6.0  
VG S - Volts  
6.5  
7.0  
7.5  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
35  
30  
25  
20  
15  
10  
5
V
= 250V  
DS  
I = 6A  
D
I
G
= 10mA  
T = 125 C  
º
J
T = 25 C  
º
J
0
0
3
6
9
12 15 18 21 24 27 30  
0.4  
0.5  
0.6 0.7  
VS D - Volts  
0.8  
0.9  
1.0  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
100  
10  
1
f
=1M Hz  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
oss  
10ms  
T = 150ºC  
J
DC  
C
rss  
T
= 25ºC  
C
0.1  
10  
10  
100  
VD S - Volts  
1000  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTP12N50PM  
Fig. 13. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS REF: T_12N50P(4J)4-14-08-D  
© 2008 IXYS CORPORATION, All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

代理产品

代理品牌

代理器件

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.199546s