IXTY1R4N100P IXTA1R4N100P
IXTP1R4N100P
Symbol
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
0.70
1.10
S
Ciss
Coss
Crss
450
27
6
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30Ω (External)
td(on)
tr
td(off)
tf
25
35
65
28
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
17.8
2.8
9.9
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Pins: 1 - Gate
3 - Source
2 - Drain
RthJC
RthCS
2.0 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
1.4 A
4.2 A
1.5 V
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
IF = 1.4A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
750
ns
TO-252 (IXTY) Outline
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Pins: 1 - Gate
3 - Source
2,4 - Drain
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19 2.38
0.89 1.14
0.086
0.035
0.094
0.045
A2
b
0
0.13
0
0.005
0.035
0.64 0.89
0.025
b1
b2
0.76 1.14
5.21 5.46
0.030
0.205
0.045
0.215
c
c1
0.46 0.58
0.46 0.58
0.018
0.018
0.023
0.023
D
D1
5.97 6.22
4.32 5.21
0.235
0.170
0.245
0.205
E
E1
6.35 6.73
4.32 5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64 1.02
0.89 1.27
2.54 2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
