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4MBI300VG-120R-50

型号：

4MBI300VG-120R-50

描述：

IGBT模块（ V系列） 1200V / 300A / IGBT ， 600V / 300A / RB -IGBT ，4合1包[ IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package ]

品牌：

FUJI[ FUJI ELECTRIC ]

页数：

11 页

PDF大小：

658 K

下载PDF手册
http://www.fujielectric.com/products/semiconductor/  
4MBI300VG-120R-50  
IGBT MODULE (V series)  
IGBT Modules  
1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package  
Features  
Higher Efficiency  
Optimized A (T-type) -3 level circuit  
Low inductance module structure  
Featuring Reverse Blocking IGBT (RB-IGBT)  
Applications  
Inverter for Motor Drive  
Uninterruptible Power Supply  
Power conditioner  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1200  
±20  
V
V
V
GES  
I
C
Continuous  
1ms  
T
T
C
=80°C  
=80°C  
300  
IGBT  
FWD  
Icp  
C
600  
Collector current  
A
-I  
C
300  
-IC pulse  
1ms  
600  
Collector power dissipation  
Collector-Emitter voltage  
Gate-Emitter voltage  
P
V
V
C
1 device  
1250  
600  
W
V
CES  
GES  
±20  
V
I
C
Continuous  
1ms  
T
T
C
=80°C  
=80°C  
300  
Collector current  
A
I
cp  
C
600  
Collector power dissipation  
Junction temperature  
Case temperature  
P
C
1 device  
1250  
150  
W
T
T
T
j
C
125  
°C  
Storage temperature  
stg  
-40 ~ +125  
2500  
3.5  
Isolation voltage between terminal and copper base (*1)  
V
-
iso  
AC : 1min.  
M5 or M6  
M5  
VAC  
N m  
Mounting (*2)  
Screw torque  
Terminals (*3)  
-
3.5  
Note *1:All terminals should be connected together during the test.  
Note *2: Recommendable value : 2.5-3.5 Nm (M5 or M6)  
Note *3: Recommendable value : 2.5-3.5 Nm (M5)  
1
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Electrical characteristics (at T= 25°C unless otherwise specified)  
j
Characteristics  
Units  
Items  
Symbols  
Conditions  
min.  
typ.  
-
max.  
2.0  
400  
7.0  
2.10  
-
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1200V  
-
-
mA  
nA  
V
CE = 0V, VGE = ±20V  
-
V
GE (th)  
CE = 20V, I  
C
= 300mA  
6.0  
-
6.5  
T
T
T
T
j
j
j
j
= 25°C  
=125°C  
= 25°C  
=125°C  
1.85  
2.20  
2.05  
2.40  
25.2  
1.10  
0.70  
0.14  
0.62  
0.09  
1.70  
1.85  
1.95  
2.10  
VCE (sat)  
V
GE = 15V  
= 300A  
(chip)  
I
C
-
Collector-Emitter saturation voltage  
V
-
2.35  
-
VCE (sat)  
V
GE = 15V  
= 300A  
(terminal)  
I
C
-
Input capacitance  
Turn-on time  
C
ies  
VCE = 10V, VGE =0V, f = 1MHz  
-
-
nF  
t
t
t
t
t
on  
-
1.90  
1.25  
-
SW mode : A  
r
-
V
CC = 800V  
= 300A  
r (i)  
off  
f
I
C
-
µs  
V
GE = ±15V  
G
-
1.10  
0.35  
1.95  
-
R = +10/-1Ω  
Turn-off time  
-
Tj  
Tj  
Tj  
Tj  
= 25°C  
=125°C  
= 25°C  
=125°C  
-
V
F
F
(chip)  
I
F
F
= 300A  
= 300A  
-
Forward on voltage  
V
-
2.25  
-
V
(terminal) I  
-
SW mode : A  
Reverse recovery time  
t
rr  
VCC = 800V  
GE = ±15V  
I
R
F
= 300A  
= +10/-1Ω  
-
-
0.35  
µs  
V
G
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 600V  
-
-
3.0  
600  
7.5  
2.80  
-
mA  
nA  
V
CE = 0V, VGE = ±20V  
-
-
V
GE (th)  
CE = 20V, I  
C
= 300mA  
5.5  
6.5  
Tj  
Tj  
Tj  
Tj  
= 25°C  
=125°C  
= 25°C  
=125°C  
-
-
-
-
-
-
-
-
-
-
2.45  
2.60  
2.55  
2.70  
19.5  
0.45  
0.27  
0.12  
1.32  
0.11  
V
(chip)  
CE (sat)  
VGE = 15V  
I
C
= 300A  
Collector-Emitter saturation voltage  
V
2.95  
-
V
CE (sat)  
VGE = 15V  
(terminal)  
I
C
= 300A  
Input capacitance  
Turn-on time  
C
ies  
VCE = 10V, VGE = 0V, f = 1MHz  
-
nF  
t
t
t
t
t
on  
1.05  
0.53  
-
SW mode : B  
r
VCC = 400V  
r (i)  
off  
f
I
V
C
= 300A  
µs  
GE = ±15V  
3.00  
0.35  
R
G
= +8.2/-39Ω  
Turn-off time  
SW mode : C  
Reverse recovery time  
t
rr  
VCC = 400V  
GE = ±15V  
I
R
C
= 300A  
= +10/-1Ω  
-
-
0.30  
µs  
V
G
P-N  
P-M  
M-N  
-
-
-
40  
33  
33  
-
-
-
Internal inductance  
L
nH  
Thermal resistance characteristics  
Items  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
T1, T2 IGBT  
T1, T2 FWD  
-
-
-
-
-
-
0.10  
0.16  
0.10  
-
Thermal resistance (1device)  
R
th(j-c)  
-
T3, T4 RB-IGBT  
T1, T2  
-
°C/W  
0.025  
0.017  
Contact thermal resistance (1device) (*4)  
R
th(c-f)  
with Thermal Compound  
T3, T4  
-
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound (thermal conductivity = 1W/m ·k).  
2
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Definitions of switching time  
90%  
0V  
0V  
V
GE  
trr  
L
I
rr  
V
CE  
I
C
90%  
90%  
VCC  
10%  
10%  
10%  
IC  
V
CE  
0V  
0A  
R
G
V
CE  
t
f
t
r (i)  
V
GE  
IC  
t
on  
r
t
off  
t
Definitions of switching mode  
P
T1  
T2  
Vcc2  
T1 G  
T3 E T3 G  
T1/T4 E  
T3  
Vcc1  
M
U
T4  
Vcc2  
C
T4 G  
T2 G  
T2 E  
N
Load L  
U-N  
T1  
T2  
T3  
T4  
SW mode  
A
SW  
OFF  
OFF  
OFF  
SW  
OFF  
SW  
OFF  
OFF  
SW  
ON  
OFF  
OFF  
ON  
P-U  
P-U  
OFF  
OFF  
OFF  
SW  
B
C
U-N  
SW  
ON  
M-U  
M-U  
OFF  
ON  
OFF  
OFF  
SW: Connect to drive circuit and input gate signal  
ON: Bias voltage of gate +ꢀ15V  
OFF: Reverse bias voltage of gate -1ꢀ5V  
Vcc2=Vcc1/2  
3
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Characteristics (Representative)  
[ T1, T2 ]  
[ T1, T2 ]  
Collector current vs. Collector-Emitter voltage (typ.)  
= 25°C / chip  
Collector current vs. Collector-Emitter voltage (typ.)  
Tj  
Tj= 125°C / chip  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
V
GE=20V  
15V  
V
GE=20V  
15V  
12V  
12V  
10V  
8V  
10V  
8V  
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]  
Collector-Emitter voltage: VCE [V]  
[ T1, T2 ]  
[ T1, T2 ]  
Collector current vs. Collector-Emitter voltage (typ.)  
GE=15V / chip  
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)  
= 25ºC / chip  
V
Tj  
600  
500  
400  
300  
200  
100  
0
8
6
4
2
0
Tj  
=25°C  
Tj=125°C  
I
I
I
C=600A  
C=300A  
C=150A  
0
1
2
3
4
5
5
10  
15  
20  
25  
Collector-Emitter voltage: VCE [V]  
Gate - Emitter voltage: VGE [V]  
[ T1, T2 ]  
[ T1, T2 ]  
Capacitance vs. Collector-Emitter voltage (typ.)  
GE=0V, f= 1MHz, T= 25°C  
Dynamic gate charge (typ.)  
V
j
VCC=600V, I  
C
=300A, T=25ºC  
j
100.0  
10.0  
1.0  
C
ies  
V
GE  
C
res  
C
oes  
V
CE  
0.1  
0
10  
20  
30  
0
1
2
[µC]  
3
Collector - Emitter voltage: VCE [V]  
Gate charge: Q  
g
4
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
[ SW mode A ]  
Switching time vs. Collector current (typ.)  
=+10/-1Ω, T=125°C (T1, T2)  
[ SW mode A ]  
Switching time vs. Collector current (typ.)  
V
CC=800V, I  
C
=300A, VGE=±15V, T=125°C  
j
V
CC=800V, VGE=±15V, R  
G
j
10000  
1000  
100  
10000  
t
on  
t
t
on  
r
t
off  
1000  
100  
10  
t
off  
t
r
t
f
t
f
10  
0
100  
200  
300  
400  
500  
1
10  
Gate resistance : R  
100  
Collector current: I  
C
[A]  
G
[Ω] (T1, T2)  
[ SW mode A ]  
Switching loss vs. gate resistance (typ.)  
=300A, VGE=±15V  
[ SW mode A]  
Switching loss vs. Collector current (typ.)  
=+10/-1Ω (T1, T2)  
V
CC=800V, I  
C
V
CC=800V, VGE=±15V, R  
G
600  
500  
400  
300  
200  
100  
200  
150  
100  
50  
E
on(125°C)  
on(25°C)  
E
E
on(125°C)  
E
off(125°C)  
off(25°C)  
E
Eon(25°C)  
E
rr(125°C)  
rr(25°C)  
E
off(125°C)  
off(25°C)  
E
rr(125°C)  
rr(25°C)  
E
E
0
1
0
E
10  
Gate resistance : R  
100  
0
100  
200  
300  
400  
500  
[A]  
600  
Collector current: I  
C
G
[Ω] (T1, T2)  
[ T1, T2 ]  
[ T1, T2 ]  
Forward current vs. forward on voltage (typ.)  
Reverse recovery characteristics (typ.)  
chip  
V
CC=800V, VGE=±15V, R  
G
=+10/-1Ω (T1, T2)  
1000  
600  
500  
400  
300  
200  
100  
0
Tj  
=25°C  
T
j
=125°C  
t
I
t
I
rr(125°C)  
rr(125°C)  
rr(25°C)  
rr(25°C)  
100  
10  
0
100  
200  
300  
400  
[A]  
500  
600  
0
1
2
3
4
Forward on voltage : V  
F
[V]  
Forward current : I  
F
5
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Reverse bias safe operating area (max.)  
V
GE=15V, -VGE ≦ 15V, R  
G
≧ +10 / -1Ω, T  
j
≦ 125°C, L = 46nH (T1, T2)  
S
T1, T2 (Terminal)  
1000  
800  
600  
400  
200  
0
RBSOA  
(Repetitive pulse)  
0
400  
800  
1200  
Collector-Emitter voltage : VCE [V]  
[ SW mode C ]  
[ SW mode C ]  
Switching time vs. Collector current (typ.)  
Switching time vs. Collector current (typ.)  
VCC=400V, I  
C
=300A, VGE=±15V, T=125°C  
j
V
CC=400V, VGE=±15V, R  
G
=+10/-1Ω, T  
j=125°C (T1, T2)  
10000  
1000  
100  
10000  
t
on  
t
on  
t
off  
1000  
100  
10  
t
r
t
off  
t
r
t
f
t
f
10  
0
100  
200  
300  
400  
500  
1
10  
Gate resistance : R  
100  
Collector current: I  
C
[A]  
G
[Ω] (T1, T2)  
[ SW mode C ]  
Switching loss vs. gate resistance (typ.)  
=300A, VGE=±15V  
[ SW mode C]  
Switching loss vs. Collector current (typ.)  
=+10/-1Ω (T1, T2)  
V
CC=400V, I  
C
V
CC=400V, VGE=±15V, R  
G
200  
150  
100  
50  
75  
50  
25  
0
E
on(125°C)  
E
E
E
on(25°C)  
off(125°C)  
off(25°C)  
E
on(125°C)  
E
on(25°C)  
E
off(125°C)  
off(25°C)  
E
E
rr(125°C)  
rr(25°C)  
Err(125°C)  
E
0
1
Err(25°C)  
10  
Gate resistance : R  
100  
0
100  
200  
300  
400  
500  
[A]  
600  
Collector current: I  
C
G
[Ω] (T1, T2)  
6
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
[ T3, T4 ]  
Collector current vs. Collector-Emitter voltage (typ.)  
= 25°C / chip  
[ T3, T4 ]  
Collector current vs. Collector-Emitter voltage (typ.)  
T
j
T= 125°C / chip  
j
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
V
GE=20V  
15V  
12V  
V
GE=20V  
15V  
12V  
10V  
10V  
8V  
8V  
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]  
Collector-Emitter voltage: VCE [V]  
[ T3, T4 ]  
[ T3, T4 ]  
Collector current vs. Collector-Emitter voltage (typ.)  
GE=15V / chip  
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)  
= 25°C / chip  
V
T
j
8
6
4
2
0
600  
500  
400  
300  
200  
100  
0
T
j
=25°C  
Tj=125°C  
I
I
I
C
C
C
=600A  
=300A  
=150A  
0
1
2
3
4
5
5
10  
15  
20  
25  
Collector-Emitter voltage: VCE [V]  
Gate - Emitter voltage: VGE [V]  
[ T3, T4 ]  
[ T3, T4 ]  
Dynamic gate charge (typ.)  
Capacitance vs. Collector-Emitter voltage (typ.)  
GE=0V, f= 1MHz, T= 25°C  
V
j
V
CC=300V, I  
C
=300A, T=25°C  
j
100  
400  
25  
20  
15  
10  
5
C
ies  
VGE  
10  
300  
200  
100  
0
Coes  
VCE  
Cres  
1
0.1  
0.01  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
10  
20  
30  
Collector - Emitter voltage: VCE [V]  
Gate charge: Q [µC]  
g
7
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
[ SW mode B ]  
[ SW mode B ]  
Switching time vs. Collector current (typ.)  
Switching time vs. Collector current (typ.)  
V
CC=400V, I  
C
=300A, VGE=±15V, T=125°C  
j
V
CC=400V, VGE=±15V, R  
G
=+8.2/-39Ω, T  
j
=125°C (T3, T4)  
10000  
10000  
t
off  
t
off  
1000  
100  
10  
1000  
100  
10  
t
t
on  
t
t
on  
r
t
f
r
t
f
0
100  
200  
300  
400  
500  
1
10  
Gate resistance : R  
100  
[Ω] (T3, T4)  
1000  
Collector current: I  
C
[A]  
G
[ SW mode B ]  
Switching loss vs. gate resistance (typ.)  
=300A, VGE=±15V  
[ SW mode B ]  
Switching loss vs. Collector current (typ.)  
=+8.2/-39Ω (T3, T4)  
V
CC=400V, I  
C
V
CC=400V, VGE=±15V, R  
G
150  
100  
50  
60  
E
off(125°C)  
off(25°C)  
50  
40  
30  
20  
10  
0
E
E
on(125°C)  
on(25°C)  
E
E
off(125°C)  
off(25°C)  
E
E
on(125°C)  
on(25°C)  
E
E
rr(125°C)  
rr(25°C)  
E
Err(125°C)  
rr(25°C)  
E
0
1
10  
Gate resistance : R  
100  
[Ω] (T3, T4)  
1000  
0
100  
200  
300  
400  
500  
[A]  
600  
Collector current: I  
C
G
Reverse bias safe operating area (max.)  
Transient Thermal Resistance (max.)  
V
GE = 15V, -VGE ≦ 15V, R  
G
≧ +8.2 / -39Ω, T  
j
≦ 125°C, L  
S
= 46nH (T3, T4)  
T3, T4 (Terminal)  
1
1000  
FWD  
800  
600  
400  
200  
0
0.1  
IGBT, RB-IGBT  
0.01  
RBSOA  
(Repetitive pulse)  
0.001  
0.001  
0.01  
0.1  
1
0
200  
400  
600  
800  
Pulse Width : P  
W
[sec]  
Collector-Emitter voltage : VCE [V]  
8
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Reverse recovery withstand capability for FWD, RB-IGBT  
Tj=125°C  
700  
600  
500  
400  
300  
200  
100  
0
Pmax[T1,T2]=300kW  
Pmax[T3,T4]=100kW  
0
200 400 600 800 1000 1200 1400  
RP [V]  
V
9
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Outline Drawings, mm  
Equivalent Circuit Schematic  
P
T1  
T2  
T1 G  
T1/T4 E  
T3 E  
T3 G  
T3  
M
U
T4  
T4 G  
C
T2 G  
T2 E  
RB-IGBT  
Reverse Blocking IGBT  
N
10  
4MBI300VG-120R-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
WARNING  
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.  
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be  
sur to obtain the latest specifications.  
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or  
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)  
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged  
infringement of other's intellectual property rights which may arise from the use of the applications described herein.  
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become  
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent  
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your  
design failsafe, flame retardant, and free of malfunction.  
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability  
requirements.  
• Computers  
• OA equipment  
• Communications equipment (terminal devices)  
• Measurement equipment  
• Machine tools  
• Audiovisual equipment • Electrical home appliances  
• Personal equipment • Industrial robots etc.  
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,  
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate  
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment  
becomes faulty.  
• Transportation equipment (mounted on cars and ships)  
• Traffic-signal control equipment  
• Emergency equipment for responding to disasters and anti-burglary devices  
• Medical equipment  
• Trunk communications equipment  
• Gas leakage detectors with an auto-shut-off feature  
• Safety devices  
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment  
(without limitation).  
• Space equipment  
• Aeronautic equipment  
• Nuclear control equipment  
• Submarine repeater equipment  
7. Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved.  
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.  
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.  
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions  
set forth herein.  
11  
厂商 型号 描述 页数 下载

FUJI

 		4MBI100T-060 [ 4MBI100T-060 ] 14 页

FUJI

 		4MBI150T-060 IGBT模块[ IGBT Module ] 14 页

FUJI

 		4MBI200T-060 IGBT模块[ IGBT Module ] 14 页

FUJI

 		4MBI400VG-060R-50 IGBT模块（ V系列） 600V / 400A / IGBT ， RB -IGBT 4在一个封装[ IGBT MODULE (V series) 600V / 400A / IGBT, RB-IGBT 4 in one package ] 10 页

FUJI

 		4MBI75T-060 IGBT模块[ IGBT Module ] 14 页

ETC

 		4MBP100RA-060 4 IPM IGBT\n[ 4 IPM IGBT ] 15 页

FUJI

 		4MBP100RA060 IGBT -IPM[ IGBT-IPM ] 15 页

FUJI

 		4MBP75RA060 IGBT -IPM[ IGBT-IPM ] 15 页

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