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4MBI75T-060

型号：

4MBI75T-060

描述：

IGBT模块[ IGBT Module ]

品牌：

FUJI[ FUJI ELECTRIC ]

页数：

14 页

PDF大小：

626 K

下载PDF手册
SPECIFICATION  
IGBT Module  
4MBI75T-060  
MS5F 5432  
Device Name :  
Type Name  
:
Spec. No. :  
Fuji Electric Co.,Ltd.  
Matsumoto Factory  
Apr. 23 ’03  
S.Ogawa  
a
b
c
T.Fujihira  
Apr. 23 ’03 T.Miyasaka  
Apr. - 23 - ’03 K.Yamada  
1
MS5F 5432  
14  
H04-004-07  
R e v i s e d R e c o r d s  
Classi-  
Applied  
date  
Date  
fication  
Ind.  
Content  
Drawn  
Checked  
Approved  
T.Fujihira  
T.Miyasaka  
K.Yamada  
Issued  
date  
Apr. - 23- ’03  
enactment  
Added thermistor  
T.Miyasaka  
K.Yamada  
Oct. - 16- ’03  
Dec. - 10- ’03  
Sep. - 07- ’04  
Revision  
Revision  
Revision  
a
b
c
Y.Seki  
Y.Seki  
Y.Seki  
Y.Kobayashi  
Y.Kobayashi  
(P3/14, 4/14, 12/14)  
Revised VCE(sat),VF  
(P4/14, 10/14, 12/14)  
S.Miyashita  
K.Yamada  
Revised VF  
S.Miyashita  
K.Yamada  
Y.Kobayashi  
(P4/14, 12/14)  
a
b
c
2
MS5F 5432  
14  
H04-004-06  
4MBI75T-060  
1. Outline Drawing ( Unit : mm )  
(
) showsreferencedimension.  
[Thermistor]  
a
2. Equivalent circuit  
[Inverter]  
8
9
a
b
c
3
MS5F 5432  
14  
H04-004-03  
3. Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ）  
Maximum  
Ratings  
600  
Items  
Symbols  
Conditions  
Ic=1mA  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
VCES  
VGES  
V
V
±20  
75  
Ic  
Ic pulse  
IF  
Duty=100 %  
1ms  
150  
A
Collector current  
75  
Duty=50 %  
1ms  
IF pulse  
Pc  
150  
Collector Power Dissipation  
Junction temperature  
Storage temperature  
1 device  
178  
W
°C  
°C  
Tj  
150  
Tstg  
-40~ +125  
between terminal and copper base *1  
a
Isolation  
voltage  
Viso  
-
AC : 1min.  
2500  
3.5  
V
between thermistor and others *2  
Mounting *3  
Screw  
Torque  
N m  
(*1) All terminals should be connected together when isolation test will be done.  
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together  
and shorted to base plate when isolation test will be done.  
(*3) Recommendable Value : Mounting 2.5~3.5 N m (M5)  
4. Electrical characteristics ( at Tj= 25°Cunless otherwise specified)  
Characteristics  
min. typ. Max.  
Items  
Symbols  
Conditions  
Units  
Zero gate voltage  
Collector current  
Gate-Emitter leakage current  
CES  
GE  
CE  
CE  
GE  
I
V
V
0 V,  
0 V,  
V
V
=
=
600 V  
±20 V  
-
-
-
-
1.0  
mA  
nA  
I
GES  
200  
Gate-Emitter  
threshold voltage  
V
GE(th)  
V
CE 20 V, Ic =  
75 mA 6.2  
6.7  
7.7  
V
V
V
15 V  
Chip  
-
-
-
-
b 2.0 b 2.3  
b 2.3 b 2.6  
Collector-Emitter  
GE  
VCE(sat)  
saturation voltage  
Ic =  
75 A  
0 V  
Terminal  
VGE =  
Input capacitance  
Cies  
5500  
1000  
850  
0.4  
-
-
Output capacitance  
Reverse transfer capacitance  
Coes  
V
CE 10 V  
1 MHz  
Vcc =300 V  
Ic = 75 A  
GE ±15 V  
pF  
Cres f =  
-
-
-
-
-
-
-
-
-
-
ton  
tr  
1.2  
0.6  
-
Turn-on time  
0.25  
0.1  
tr(i)  
toff  
tf  
V
R
μs  
G
=
51  
0.4  
1.2  
Ω
Turn-off time  
0.04 0.45  
c 2.1 c 2.5  
c 2.4 c 2.8  
Chip  
I
F
=
75 A  
IF = 75 A  
Ic > 150A ,Tj = 125°C  
T = 25°C  
F
Forward on voltage  
V
V
Terminal  
Reverse recovery time  
Allowabe avalanche energy  
during short circuit cutting off  
(Non-repetitive)  
trr  
-
0.3  
μs  
P
AV  
30  
-
-
mJ  
a
-
5000  
495  
-
Ω
Resistance  
B value  
R
B
T =100°C  
465  
520  
T = 25/50°C  
3305 3375 3450  
K
5. Thermal resistance characteristics  
Items  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ. Max.  
th(j-c) IGBT  
-
-
-
-
-
0.70  
R
Thermal resistance (1 device)  
FWD  
1.66 °C/W  
-
Contact Thermal resistance (1 device)  
R
th(c-f) With thermal compound *  
0.05  
* This is the value which is defined mounting on the additional cooling fin  
with thermal compound.  
a
b
c
4
MS5F 5432  
14  
H04-004-03  
6. Indication on module  
4MBI75T-060  
75A 600V  
Place of manufucturing  
Lot No.  
7. Applicable category  
This specification is applied to IGBT Module named 4MBI75T-060  
8. Storage and transportation notes  
The module should be stored at a standard temperature of 5 to 35 and  
Ｃ
・
humidity of 45 to 75% .  
Store modules in a place with few temperature changes in order to avoid  
condensation on the module surface.  
・
Avoid exposure to corrosive gases and dust.  
・
・
・
・
Avoid excessive external force on the module.  
Store modules with unprocessed terminals.  
Do not drop or otherwise shock the modules when tranporting.  
9. Definitions of switching time  
90%  
0V  
0V  
V
GE  
t
rr  
L
I
rr  
V
Ic  
CE  
90%  
90%  
Vcc  
10%  
10%  
10%  
V
CE  
Ic  
0V  
0A  
R
G
V
CE  
t
r(i)  
t
f
V
GE  
t
r
Ic  
t
off  
t
on  
a
b
c
5
MS5F 5432  
14  
H04-004-03  
10. Definition of the allowable avalance energy during short circuit cutting off  
-VCEP  
1
PAV=  
×VCEP×ICP×tf(SC)  
2
IC  
-ICP  
VCE  
tf(SC)  
11. UL recognition  
This products is recognized by Underwriters Laboratories Inc., the file No. is E82988.  
12. Packing and Labeling  
Packing box  
Display on the packing box  
- Logo of production  
- Type name  
- Lot No.  
- Products quantity in a packing box  
Display  
* Each modules are packed with electrical protection.  
a
b
c
6
MS5F 5432  
14  
H04-004-03  
13. Reliability test results  
Reliability Test Items  
Reference  
norms  
EIAJ ED-4701  
(Aug.-2001 edition)  
Test  
cate-  
gories  
Number Accept-  
of ance  
sample number  
Test items  
Test methods and conditions  
1 Terminal Strength Pull force  
: 20N  
Test Method 401  
5
5
( 1 : 0 )  
( 1 : 0 )  
Ⅰ
Method  
(Pull test)  
Test time  
: 10±1 sec.  
2 Mounting StrengthScrew torque  
Test time  
: 2.5 ~ 3.5 N m (M5)  
Test Method 402  
･
Ⅱ
method  
: 10±1 sec.  
3 Vibration  
Range of frequency : 10 ~ 500Hz  
Test Method 403  
Reference 1  
5
( 1 : 0 )  
Sweeping time  
Acceleration  
: 15 min.  
100m/s2  
:
Condition code B  
Sweeping direction : Each X,Y,Z axis  
Test time  
: 6 hr. (2hr./direction)  
5000m/s2  
: 1.0msec.  
Test Method 404  
Condition code B  
4 Shock  
Maximum acceleratio :  
Pulse width  
Direction  
5
5
( 1 : 0 )  
( 1 : 0 )  
: Each X,Y,Z axis  
: 3 times/direction  
: 235±5 ℃  
Test time  
5 Solderabitlity  
Solder temp.  
Immersion time  
Test time  
Test Method 303  
Condition code A  
: 5±0.5sec.  
: 1 time  
Each terminal should be Immersed in solder  
within 1~1.5mm from the body.  
6 Resistance to  
Soldering Heat  
Solder temp.  
Immersion time  
Test time  
: 260±5  
5
( 1 : 0 )  
℃
Test Method 302  
Condition code A  
: 10±1sec.  
: 1 time  
Each terminal should be Immersed in solder  
within 1~1.5mm from the body.  
Test Method 201  
Test Method 202  
1 High Temperature Storage temp.  
Storage Test duration  
2 Low Temperature Storage temp.  
: 125±5 ℃  
: 1000hr.  
: -40±5 ℃  
: 1000hr.  
: 85±2 ℃  
: 85±5%  
5
5
5
( 1 : 0 )  
( 1 : 0 )  
( 1 : 0 )  
Storage  
3 Temperature  
Humidity  
Test duration  
Storage temp.  
Relative humidity  
Test duration  
Test temp.  
Test Method 103  
Test code C  
Storage  
: 1000hr.  
4 Unsaturated  
: 120  
2
Test Method 103  
Test code E  
5
5
( 1 : 0 )  
( 1 : 0 )  
± ℃  
1.7 × 105 Pa  
Pressure Cooker Atmospheric pressure:  
Test humidity  
: 85±5%  
Test duration  
: 96hr.  
5 Temperature  
Test Method 105  
Cycle  
Test temp.  
:
Low temp. -40±5 ℃  
High temp. 125  
5
± ℃  
RT 5 ~ 35 ℃  
Dwell time  
: High ~ RT ~ Low ~ RT  
1hr. 0.5hr. 1hr. 0.5hr.  
: 100 cycles  
Number of cycles  
Test temp.  
6 Thermal Shock  
Test Method 307  
method Ⅰ  
5
( 1 : 0 )  
+0  
:
High temp. 100 -5  
℃
Condition code A  
+5  
Low temp. 0 -0  
℃
Used liquid : Water with ice and boiling water  
Dipping time  
: 5 min. par each temp.  
: 10 sec.  
Transfer time  
Number of cycles  
: 10 cycles  
a
b
c
7
MS5F 5432  
14  
H04-004-03  
Reliability Test Items  
Reference  
norms  
EIAJ ED-4701  
Test  
cate-  
gories  
Number Accept-  
of ance  
sample number  
Test items  
Test methods and conditions  
(Aug.-2001 edition)  
Test Method 101  
1 High temperature  
Reverse Bias  
5
( 1 : 0 )  
Test temp.  
: Ta = 125±5 ℃  
(Tj ≦ 150 ℃)  
Bias Voltage  
Bias Method  
: VC = 0.8×VCES  
: Applied DC voltage to C-E  
VGE = 0V  
Test duration  
Test temp.  
: 1000hr.  
Test Method 101  
2 High temperature  
Bias (for gate)  
5
( 1 : 0 )  
: Ta = 125±5 ℃  
(Tj ≦ 150 ℃)  
Bias Voltage  
Bias Method  
: VC = VGE = +20V or -20V  
: Applied DC voltage to G-E  
VCE = 0V  
Test duration  
Test temp.  
: 1000hr.  
Test Method 102  
Condition code C  
3 Temperature  
Humidity Bias  
5
5
( 1 : 0 )  
85±2 oC  
:
Relative humidity  
Bias Voltage  
:
85±5%  
: VC = 0.8×VCES  
: Applied DC voltage to C-E  
VGE = 0V  
: 1000hr.  
: 2 sec.  
: 18 sec.  
:
ꢁ Tj=100±5 deg  
Tj ≦ 150 ℃, Ta=25±5 ℃  
Bias Method  
Test duration  
ON time  
OFF time  
Test Method 106  
4 Intermitted  
Operating Life  
(Power cycle)  
( for IGBT )  
( 1 : 0 )  
Test temp.  
Number of cycles  
Characteristic  
: 15000 cycles  
Failure Criteria  
Item  
Symbol  
Failure criteria  
Lower limit Upper limit  
Unit  
Note  
Electrical  
Leakage current  
ICES  
±IGES  
VGE(th)  
VCE(sat)  
VF  
-
-
USL×2  
USL×2  
mA  
characteristic  
A
ꢀ
Gate threshold voltage  
Saturation voltage  
Forward voltage  
LSL×0.8  
USL×1.2  
USL×1.2  
USL×1.2  
USL×1.2  
mA  
V
-
-
-
V
Thermal  
IGBT  
VGE  
mV  
ꢁ
resistance  
or ꢁ VCE  
VF  
FWD  
-
USL×1.2  
mV  
-
ꢁ
Isolation voltage  
Visual inspection  
Peeling  
Viso  
Broken insulation  
Visual  
inspection  
-
The visual sample  
-
Plating  
and the others  
LSL : Lower specified limit.  
USL : Upper specified limit.  
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room  
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the  
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry  
completely before the measurement.  
a
b
c
8
MS5F 5432  
14  
H04-004-03  
Reliability Test Results  
Test  
cate-  
gorie  
s
Number  
of  
failure  
sample  
Reference  
norms  
EIAJ ED-4701  
Number  
of test  
sample  
Test items  
(Aug.-2001 edition)  
Test Method 401  
MethodⅠ  
1 Terminal Strength  
(Pull test)  
5
5
5
5
5
5
5
5
5
5
5
5
0
0
0
0
0
0
0
0
0
0
0
0
Test Method 402  
methodⅡ  
2 Mounting Strength  
3 Vibration  
Test Method 403  
Condition code B  
Test Method 404  
Condition code B  
4 Shock  
5 Solderabitlity  
Test Method 303  
Condition code A  
Test Method 302  
Condition code A  
Test Method 201  
6 Resistance to Soldering Heat  
1 High Temperature Storage  
2 Low Temperature Storage  
Test Method 202  
Test Method 103  
Test code C  
3 Temperature Humidity  
Storage  
Test Method 103  
Test code E  
4 Unsaturated  
Pressure Cooker  
5 Temperature Cycle  
Test Method 105  
Test Method 307  
method Ⅰ  
6 Thermal Shock  
Condition code A  
Test Method 101  
1 High temperature Reverse Bias  
5
5
5
5
0
0
0
0
Test Method 101  
2 High temperature Bias  
( for gate )  
Test Method 102  
Condition code C  
Test Method 106  
3 Temperature Humidity Bias  
4 Intermitted Operating Life  
(Power cycling)  
( for IGBT )  
a
b
c
9
MS5F 5432  
14  
H04-004-03  
[ Inverter ]  
Collector current vs. Collector-Emitter voltage  
Tj= 25C (typ.)  
[ Inverter ]  
Collector current vs. Collector-Emitter voltage  
Tj= 125C (typ.)  
b
b
200  
150  
100  
50  
200  
15V  
VGE= 20V  
12V  
15V  
VGE= 20V  
12V  
150  
100  
50  
10V  
10V  
8V  
8V  
0
0
0
1
2
3
4
5
0
5
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]  
Collector - Emitter voltage : VCE [ V ]  
[ Inverter ]  
[ Inverter ]  
b
Collector current vs. Collector-Emitter voltage  
VGE=15V (typ.)  
Collector-Emitter voltage vs. Gate-Emitter voltage  
Tj= 25C (typ.)  
200  
150  
100  
50  
12  
10  
8
Tj= 25C  
Tj= 125C  
6
4
Ic=150A  
2
Ic=75A  
Ic=37.5A  
0
0
0
1
2
3
4
5
10  
15  
20  
25  
Collector - Emitter voltage : VCE [ V ]  
Gate - Emitter voltage : VGE [ V ]  
[ Inverter ]  
[ Inverter ]  
Dynamic Gate charge (typ.)  
Vcc=300V, Ic=100A, Tj= 25C  
Capacitance vs. Collector-Emitter voltage (typ.)  
VGE=0V, f= 1MHz, Tj= 25C  
20000  
10000  
5000  
500  
400  
300  
200  
100  
0
25  
20  
15  
10  
5
Cies  
1000  
Coes  
Cres  
200  
0
0
5
10  
15  
20  
25  
30  
35  
100  
200  
300  
400  
Collector - Emitter voltage : VCE [ V ]  
Gate charge : Qg [ nC ]  
a
b
c
10  
MS5F 5432  
14  
H04-004-03  
[ Inverter ]  
[ Inverter ]  
Switching time vs. Collector current (typ.)  
Vcc=300V, VGE=+-15V, Rg= 51ohm, Tj= 125C  
Switching time vs. Collector current (typ.)  
Vcc=300V, VGE=+-15V, Rg=51ohm, Tj= 25C  
1000  
100  
10  
1000  
100  
10  
ton  
ton  
toff  
tr  
toff  
tr  
tf  
tf  
0
50  
100  
150  
200  
500  
0
0
0
50  
100  
150  
150  
800  
Collector current : Ic [ A ]  
Collector current : Ic [ A ]  
[ Inverter ]  
[ Inverter ]  
Switching time vs. Gate resistance (typ.)  
Vcc=300V, Ic=75A, VGE=+-15V, Tj= 25C  
Switching loss vs. Collector current (typ.)  
Vcc=300V, VGE=+-15V, Rg=51ohm  
5000  
1000  
8
6
4
2
0
Eon(125C)  
ton  
toff  
tr  
Eon(25C)  
Eoff(125C)  
Eoff(25C)  
100  
tf  
Err(125C)  
Err(25C)  
10  
10  
100  
50  
100  
Gate resistance : Rg [ ohm ]  
Collector current : Ic [ A ]  
[ Inverter ]  
[ Inverter ]  
Switching loss vs. Gate resistance (typ.)  
Vcc=300V, Ic=75A, VGE=+-15V, Tj= 125C  
Reverse bias safe operating area  
+VGE=15V, -VGE<=15V, Rg>=51ohm, Tj<=125C  
20  
15  
10  
5
200  
150  
100  
50  
Eon  
Eoff  
Err  
0
0
50  
100  
200  
400  
600  
Gate resistance : Rg [ ohm ]  
Collector - Emitter voltage : VCE [ V ]  
a
b
c
11  
MS5F 5432  
14  
H04-004-03  
[ Inverter ]  
Reverse recovery characteristics (typ.)  
Vcc=300V, VGE=+-15V, Rg=51ohm  
[ Inverter ]  
c
Forward current vs. Forward on voltage (typ.)  
150  
300  
Tj=125C  
trr(125C)  
100  
100  
50  
0
Tj=25C  
trr(25C)  
Irr(125C)  
Irr(25C)  
10  
0
1
2
3
4
0
50  
100  
150  
Forward on voltage : VF [ V ]  
Forward current : IF [ A ]  
a
[Thermistor]  
Transient thermal resistance  
Temperature characteristic (typ.)  
3
1
100  
FWD  
IGBT  
10  
1
0.1  
0.1  
0.02  
0.001  
0.01  
0.1  
1
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
Pulse width : Pw [ sec ]  
Temperature [°C ]  
a
b
c
12  
MS5F 5432  
14  
H04-004-03  
Warnings  
-
-
-
This product shall be used within its absolute maximum rating (voltage, current, and temperature).  
This product may be broken in case of using beyond the ratings.  
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。  
絶対最大定格を超えて使用すると、素子が破壊する場合があります。  
Connect adequate fuse or protector of circuit between three-phase line and  
this product to prevent the equipment from causing secondary destruction.  
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ  
又はブレーカーを必ず付けて２次破壊を防いでください。  
Use this product after realizing enough working on environment and considering of product's reliability life.  
This product may be broken before target life of the system in case of using beyond the product's reliability life.  
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。  
製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。  
If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,  
sulfurous acid gas), the product's performance and appearance can not be ensured easily.  
-
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は  
致しかねます。  
Use this product within the power cycle curve (Technical Rep.No. : MT6M3947)  
-
-
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT6M3947)  
Never add mechanical stress to deform the main or control terminal.  
The deformed terminal may cause poor contact problem.  
主端子及び制御端子に応力を与えて変形させないで下さい。ꢀ端子の変形により、接触不良などを引き起こす場合  
があります。  
Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the  
roughness within 10um. Also keep the tightening torque within the limits of this specification.  
Improper handling may cause isolation breakdown and this may lead to a critical accident.  
-
100mm 100um  
冷却フィンはネジ取り付け位置間で平坦度を  
10um  
以下にして下さい。ꢀ誤った取り扱  
で
以下、表面の粗さは  
いをすると絶縁破壊を起こし、重大事故に発展する場合があります。  
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA  
specification. This product may be broken if the locus is out of the RBSOA.  
-
-
-
-
-
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。  
RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。  
If excessive static electricity is applied to the control terminals, the devices may be broken.  
Implement some countermeasures against static electricity.  
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。  
取り扱い時は静電気対策を実施して下さい。  
Never add the excessive mechanical stress to the main or control terminals  
when the product is applied to equipments. The module structure may be broken.  
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。  
端子構造が破壊する可能性があります。  
In case of insufficient -VGE, erroneous turn-on of IGBT may occur.  
-VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V)  
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。  
誤点弧を起こさない為に-VGEは十分な値で設定して下さい。ꢀ（推奨値 : -VGE = -15V)  
In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur.  
Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.  
ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。  
誤点弧を起こさない為の最適なドライブ条件（+VGE, -VGE, RG等）でご使用下さい。  
a
b
c
13  
MS5F 5432  
14  
H04-004-03  
Cautions  
-
Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However,  
ꢀ
semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or  
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of  
the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,  
spread-fire-preventive design, and malfunction-protective design.  
富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、  
誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災  
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計  
など安全確保のための手段を講じて下さい。  
-
-
The application examples described in this specification only explain typical ones that used the Fuji Electric  
products. This specification never ensure to enforce the industrial property and other rights, nor license the  
enforcement rights.  
本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書  
によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。  
The product described in this specification is not designed nor made for being applied to the equipment or  
systems used under life-threatening situations. When you consider applying the product of this specification  
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,  
atomic control systems and submarine ralaying equipment or systems, please apply after confirmation  
ꢀ
of this product to be satisfied about system construction and required reliability.  
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを  
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力  
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に  
満足することをご確認の上、ご利用下さい。  
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.  
a
b
c
14  
MS5F 5432  
14  
H04-004-03  
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