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2SK0198Q

型号:

2SK0198Q

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

50 K

Silicon Junction FETs (Small Signal)  
2SK0198 (2SK198)  
Silicon N-Channel Junction FET  
For low-frequency amplification  
Unit: mm  
+0.10  
–0.05  
0.40  
+0.10  
–0.06  
0.16  
Features  
3
High mutual conductance gm  
Low noise type  
Mini-type package, allowing downsizing of the sets and automatic  
insertion through the tape/magazine packing.  
1
2
(0.95) (0.95)  
1.9±0.1  
+0.20  
2.90  
–0.05  
10˚  
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Drain current  
Symbol  
VDSX  
VGDO  
ID  
Ratings  
Unit  
V
30  
30  
V
1: Source  
2: Drain  
3: Gate  
JEDEC: TO-236  
EIAJ: SC-59  
Mini3-G1 Package  
20  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Marking Symbol (Example): 1O  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
150  
Tch  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
12  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Source cut-off voltage  
IDSS  
V
V
V
V
V
DS = 10 V, VGS = 0  
0.5  
IGSS  
GS = −30 V, VDS = 0  
100  
1.5  
VGSC  
DS = 10 V, ID = 10 µA  
0.1  
DS = 10 V, ID = 0.5 mA, f = 1 kHz  
DS = 10 V, VGS = 0, f = 1 kHz  
Mutual conductance  
gm  
4
mS  
13  
14  
Input capacitance (Common Source) Ciss  
pF  
pF  
V
DS = 10 V, VGS = 0, f = 1 MHz  
Reverse transfer capacitance (Common Source) Crss  
3.5  
V
DS = 30 V, ID = 1 mA, GV = 80 dB  
Noise figure  
NV  
60  
mV  
Rg = 100 k, Function = FLAT  
* IDSS rank classification  
Runk  
P
Q
R
IDSS (mA)  
0.5 to 3  
1OP  
2 to 6  
1OQ  
4 to 12  
1OR  
Marking Symbol  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: January 2002  
SJF00006BED  
1
2SK0198  
PD  
Ta  
ID  
VDS  
ID VGS  
240  
200  
160  
120  
80  
8
7
6
5
4
3
2
1
0
9.6  
8.0  
6.4  
4.8  
3.2  
1.6  
0
VDS = 10 V  
Ta = 25°C  
VGS = 0 V  
0.1 V  
0.2 V  
Ta = 75°C  
25°C  
0.3 V  
0.4 V  
40  
25°C  
0.4 0.2  
0
0
20 40 60 80 100 120 140 160  
0
0
1
2
4
6
8
10  
12  
1.0  
0.8  
0.6  
0
(
)
(
)
( )  
Gate to source voltage VGS V  
Ambient temperature Ta °C  
Drain to source voltage VDS  
V
gm  
VGS  
gm  
ID  
Ciss, Coss  
VDS  
20  
16  
12  
8
20  
16  
12  
8
10  
8
f = 1 MHz  
GS = −3 V  
VDS = 10 V  
Ta = 25°C  
VDS = 10 V  
Ta = 25°C  
V
IDSS = 5.0 mA  
Ta = 25°C  
6
Ciss  
2.0 mA  
4
IDSS = 5.0 mA  
Coss  
4
4
2
2.0 mA  
0
0
0
0.8  
0.6  
0.4  
0.2  
0
1
2
3
4
5
6
7
8
1
3
10  
30  
100  
(
)
(
)
( )  
Drain to source voltage VDS V  
Gate to source voltage VGS  
V
Drain current ID mA  
Crss  
VDS  
NF  
f
5
4
3
2
1
0
12  
10  
8
VDS = 10 V  
ID = 5.2 mA  
Ta = 25°C  
VGS = −3 V  
f = 1 MHz  
Ta = 25°C  
6
Rg = 500 Ω  
4
2
1 kΩ  
0
1
3
10  
30  
100  
10  
102  
103  
105  
( )  
V
(
Hz  
)
Drain to source voltage VDS  
Frequency  
f
SJF00006BED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-  
ment if any of the products or technologies described in this material and controlled under the  
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative character-  
istics and applied circuit examples of the products. It does not constitute the warranting of industrial  
property, the granting of relative rights, or the granting of any license.  
(3) The products described in this material are intended to be used for standard applications or gen-  
eral electronic equipment (such as office equipment, communications equipment, measuring in-  
struments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this material are subject to change without  
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-  
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to  
make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, redundant design is recommended,  
so that such equipment may not violate relevant laws or regulations because of the function of our  
products.  
(6) When using products for which dry packing is required, observe the conditions (including shelf life  
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.  
(7) No part of this material may be reprinted or reproduced by any means without written permission  
from our company.  
Please read the following notes before using the datasheets  
A. These materials are intended as a reference to assist customers with the selection of Panasonic  
semiconductor products best suited to their applications.  
Due to modification or other reasons, any information contained in this material, such as available  
product types, technical data, and so on, is subject to change without notice.  
Customers are advised to contact our semiconductor sales office and obtain the latest information  
before starting precise technical research and/or purchasing activities.  
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but  
there is always the possibility that further rectifications will be required in the future. Therefore,  
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-  
pear in this material.  
C. These materials are solely intended for a customer's individual use.  
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,  
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.  
2001 MAR  
厂商 型号 描述 页数 下载

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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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