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2SK0065

型号:

2SK0065

描述:

为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ]

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

74 K

Silicon Junction FETs (Small Signal)  
2SK0065 (2SK65)  
Silicon N-Channel Junction FET  
For impedance conversion in low frequency  
For electret capacitor microphone  
unit: mm  
4.0±0.2  
2.0±0.2  
Features  
Diode is connected between gate and source  
0.75 max.  
Low noise voltage  
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Drain to Source current  
Drain to Gate current  
Gate to Source current  
Allowable power dissipation  
Symbol  
VDSO  
VGDO  
IDSO  
Ratings  
Unit  
V
+0.20  
0.10  
0.45  
+0.20  
0.45  
0.10  
12  
(2.5) (2.5)  
0.7±0.1  
12  
V
2
mA  
mA  
mA  
mW  
°C  
1: Drain  
2: Gate  
3: Source  
1
2
3
IDGO  
IGSO  
2
2
NS-B1 Package  
PD  
20  
Operating ambient temperature Topr  
Storage temperature Tstg  
10 to +70  
20 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
Unit  
*
Drain to Source cut-off current  
IDSS  
VDS = 4.5V, VGS = 0, RS = 2.2k± 1%  
VDS = 4.5V, VGS = 0  
0.04  
0.8  
mA  
Mutual conductance  
Noise figure  
gm  
300  
500  
µS  
µV  
dB  
dB  
dB  
RS = 2.2k± 1%, f = 1kHz  
VDS = 4.5V, RS = 2.2k± 1%  
CG = 10pF, A-curve  
NV  
4
VDS = 4.5V, RS = 2.2k± 1%  
CG = 10pF, eG = 100mV, f = 70Hz  
VDS = 12V, RS = 2.2k± 1%  
CG = 10pF, eG = 100mV, f = 70Hz  
VDS = 1V, RS = 2.2k± 1%  
CG = 10pF, eG = 100mV, f = 70Hz  
*
GV1  
10  
9.5  
11  
*
Voltage gain  
GV2  
*
GV3  
* IDSS rank classification and GV value  
Runk  
IDSS (mA)  
P
0.04 to 0.2  
> 13  
> 12  
< 3  
Q
0.15 to 0.8  
> 12  
> 11  
< 3  
GV1 (dB)  
GV2 (dB)  
| GV1 GV2 | (dB)  
Note) The part number in the parenthesis shows conventional part number.  
241  
Silicon Junction FETs (Small Signal)  
2SK0065  
PD Ta  
ID VDS  
ID VGS  
24  
20  
16  
12  
8
800  
700  
600  
500  
400  
300  
200  
100  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
V
DS=4.5V  
Ta=25˚C  
VGS=0V  
0.1V  
0.2V  
0.3V  
Ta=25˚C  
25˚C  
75˚C  
0.4V  
0.5V  
0.6V  
0.7V  
4
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
12  
2.0  
1.6  
1.2  
0.8 0.4  
0
(
)
( )  
V
( )  
Gate to source voltage VGS V  
Ambient temperature Ta ˚C  
Drain to source voltage VDS  
gm VGS  
gm ID  
NF ID  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
24  
20  
16  
12  
8
VDS=4.5V  
f=1kHz  
Ta=25˚C  
VDS=4.5V  
VDS=4.5V  
Rg=100kW  
Ta=25˚C  
f=1kHz  
IDSS=0.9mA  
Ta=25˚C  
IDSS=0.9mA  
0.3mA  
0.1mA  
f=100Hz  
0.3mA  
1kHz  
10kHz  
0.1mA  
4
0
1.0  
0.8 0.6 0.4 0.2  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
( )  
V
(
)
(
)
Gate to source voltage VGS  
Drain current ID mA  
Drain current ID mA  
NF Rg  
NF f  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
VDS=4.5V  
ID=300µA  
Ta=25˚C  
VDS=4.5V  
ID=300µA  
Ta=25˚C  
f=100Hz  
1kHz  
10kHz  
Rg=10kΩ  
6
4
4
100kΩ  
2
1000kΩ  
0
0.1  
0
0.3  
1
3
10  
30  
100  
0.01 0.03  
0.1  
0.3  
1
3
10  
(
)
(
)
Signal source resistance Rg k  
Frequency  
f
KHz  
242  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-  
ment if any of the products or technologies described in this material and controlled under the  
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative character-  
istics and applied circuit examples of the products. It does not constitute the warranting of industrial  
property, the granting of relative rights, or the granting of any license.  
(3) The products described in this material are intended to be used for standard applications or gen-  
eral electronic equipment (such as office equipment, communications equipment, measuring in-  
struments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this material are subject to change without  
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-  
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to  
make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, redundant design is recommended,  
so that such equipment may not violate relevant laws or regulations because of the function of our  
products.  
(6) When using products for which dry packing is required, observe the conditions (including shelf life  
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.  
(7) No part of this material may be reprinted or reproduced by any means without written permission  
from our company.  
Please read the following notes before using the datasheets  
A. These materials are intended as a reference to assist customers with the selection of Panasonic  
semiconductor products best suited to their applications.  
Due to modification or other reasons, any information contained in this material, such as available  
product types, technical data, and so on, is subject to change without notice.  
Customers are advised to contact our semiconductor sales office and obtain the latest information  
before starting precise technical research and/or purchasing activities.  
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but  
there is always the possibility that further rectifications will be required in the future. Therefore,  
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-  
pear in this material.  
C. These materials are solely intended for a customer's individual use.  
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,  
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.  
2001 MAR  
厂商 型号 描述 页数 下载

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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

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PANASONIC

2SK0198R [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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