IXTN8N150L
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXTN) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS= 50V, ID = 4A, Note 1
1.4
2.3
3.2 S
Ciss
Coss
Crss
8000
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
405
70
td(on)
tr
td(off)
tf
36
18
90
95
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS = 0.5 • VDSS, ID = 4A
RG = 2Ω (External)
(M4 screws (4x) supplied)
Qg(on)
Qgs
250
80
nC
nC
nC
VGS= 15V, VDS = 0.5 • VDSS, ID = 4A
Qgd
116
RthJC
RthCS
0.23 °C/W
°C/W
0.05
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Characteristic Values
Min. Typ. Max.
VDS = 1500V, ID = 0.17A, TC = 60°C, TP = 3s 255
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
8
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
32
IF = 8A, VGS = 0V, Note 1
1.2
V
IF = IS, -di/dt = 100A/µs, VR = 100V
1700
ns
Notes: 1. Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
