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XVCR7N

型号:

XVCR7N

品牌:

CALOGIC[ CALOGIC, LLC ]

页数:

3 页

PDF大小:

36 K

Voltage Controlled Resistors  
CORPORATION  
VCR2N / 3P / 4N / 5P / 7N  
APPLICATIONS  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise specified)  
Small Signal Attenuators  
Filters  
Amplifier Gain Control  
Oscillator Amplitude Control  
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 15V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +175oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW  
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 2mW/oC  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
PIN CONFIGURATIONS  
VCR2N, 7N  
VCR3P, 5P  
TO-18  
TO-18  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
G,C  
D
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
-55oC to +175oC  
S
VCR2N  
XVCR2N  
VCR3P  
XVCR3P  
VCR4N  
XVCR4N  
VCR5P  
XVCR5P  
VCR7N  
XVCR7N  
Hermetic TO-18  
Sorted Chips in Carriers  
Hermetic TO-72  
Sorted Chips in Carriers  
Hermetic TO-72  
Sorted Chips in Carriers  
Hermetic TO-72  
Sorted Chips in Carriers  
Hermetic TO-72  
Sorted Chips in Carriers  
VCR3P, 5P  
TO-72  
VCR2N-5001  
VCR4N-5010(4N)  
VCR5P-5510(5P)  
C
D
G
S
VCR7N  
TO-72  
TO-72  
VCR7N-5007  
VCR3P-5508  
C
G
S
D
VCR2N / 3P / 4N / 5P / 7N  
CORPORATION  
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)  
N CHANNEL VCR FETs  
VCR2N  
VCR4N  
VCR7N  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN MAX MIN MAX MIN  
MAX  
STATIC  
V
V
GS = -15V,  
DS = 0  
IGSS  
Gate Reverse Current  
-5  
-0.2  
-7  
-0.1  
nA  
IG = -1µA,  
DS = 0  
BVGSS  
Gate-Source Breakdown Voltage  
-15  
-15  
-15  
V
V
-7.0  
60  
VGS(off)  
rds(on)  
Gate-Source Cutoff Voltage  
Drain Source ON Resistance  
-3.5  
20  
-3.5  
200  
-2.5  
-5  
ID = 1µA. VDS = 10V  
VGS = 0, ID = 0  
f = 1kHz  
f = 1MHz  
600 4,000 8,000  
DYNAMIC (Note 1)  
Cdgo  
Csgo  
Drain-Gate Capacitance  
Source-Gate Capacitance  
7.5  
7.5  
3
3
1.5  
1.5  
VGD = -10V, IS = 0  
VGS = -10V, ID = 0  
pF  
NOTE 1: For design reference only, not 100% tested.  
P CHANNEL VCR FETs  
VCR3P  
VCR5P  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN MAX MIN MAX  
STATIC  
IGSS  
Gate Reverse Current  
VGS = 15V, VDS = 0  
IG = 1µA, VDS = 0  
ID = -1µA, VDS = -10V  
VGS = 0, ID = 0  
20  
10  
nA  
V
BVGSS  
VGS(off)  
rds(on)  
Gate-Source Breakdown Voltage  
Gate-Source Cutoff Voltage  
Drain-Source ON Resistance  
15  
1.0  
70  
15  
3.5  
300  
5
7
f = 1kHz  
200  
900  
DYNAMIC (Note 1)  
Cdgo  
Csgo  
Drain-Gate Capacitance  
Source-Gate Capacitance  
VGD = 10V, IS = 0  
VGS = 10V, ID = 0  
6
6
3
3
f = 1MHz (Note 1)  
pF  
NOTE 1: For design reference only, not 100% tested.  
JFETS AS VOLTAGE REGULATORS  
The voltage controlled resistor is a junction field effect  
transistor whose drain to source ON resistance is controlled  
by gate to source voltage.  
current is applied to the drain and the input signal level is kept  
low.  
Figure 1 also shows that certain combinations of gate control  
voltage and signal levels will cause resistance modulation.  
This distortion may be improved by introducing local feedback  
as shown in figure 2 for best frequency response and  
impedance levels; eliminating the feedback capacitor will  
require the gate control voltage to be double for the same ON  
resistance. The resistor values should be equal, and about  
100.  
The gate control terminal is high impedance thereby allowing  
negligible control current. The gate voltage is zero for  
minimum resistance, and increases as the gate voltage  
approaches the pinch-off voltage.  
This VCR is intended for use on applications using low level  
AC signals. Figure 1 shows the output characteristics, with an  
enlarged graph of VDS=0 for AC signals with no DC  
component. Operation is in the first and third quadrants; the  
device will operate in the first quadrant only if a constant  
Best gate control voltage for best linearity is up to about  
0.8VPK; ON resistance increases rapidly beyond this point.  
VCR2N / 3P / 4N / 5P / 7N  
CORPORATION  
FIGURE 1  
30  
20  
10  
VGS = 0V  
VGS = -2V  
= -4V  
VGS  
VGS = -6V  
VGS = -8V  
1
2
3
4
5
6
7
8
9
10  
mA  
300  
VDS -VOLTS  
0
0
5
200  
JFET OUTPUT CHARACTERISTICS  
100  
0.3 0.2 0.1  
V
V
0.1 0.2 0.3  
100  
200  
300  
mA  
JFET OUTPUT CHARACTERISTICS  
ENLARGED AROUND VDS = 0  
0340  
FIGURE 2  
C
R
R
GATE CONTROL  
0350  
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