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IXCH36N250

型号：

IXCH36N250

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

192 K

下载PDF手册
High Voltage  
VCES = 2500V  
IC110 = 36A  
VCE(sat) ≤ 3.3V  
IXCH36N250  
IXCK36N250  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
Extended FBSOA  
TO-247 AD  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
2500  
2500  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
Tab  
VGES  
VGEM  
Continuous  
Transient  
± 25  
± 35  
V
V
E
TO-264  
IC25  
IC110  
ICM  
TC = 25°C  
73  
36  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
360  
G
C
E
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
Clamped Inductive Load  
ICM = 144  
VCE ≤ 0.8 • VCES  
A
Tab  
TSC  
VGE = 15V, TJ = 125°C,  
(SCSOA)  
RG = 82Ω, VCE = 1250V, Non-Repetitive  
10  
μs  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
PC  
TC = 25°C  
595  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z
High Blocking Voltage  
High Peak Current Capability  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
Anti-Parallel Diode  
Low Saturation Voltage  
Extended FBSOA and SCSOA  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
z
z
Weight  
TO-247  
TO-264  
6
10  
g
g
Advantages  
z
Low Gate Drive Requirement  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
6.5  
z
Switch-Mode and Resonant-Mode  
50 μA  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
Protection Circuits  
TJ = 125°C  
TJ = 125°C  
1.75 mA  
z
z
IGES  
VCE = 0V, VGE = ±25V  
±100 nA  
z
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
2.6  
3.0  
3.3  
V
V
z
z
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100374A(9/11)  
IXCH36N250  
IXCK36N250  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXCH) Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 36A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
22  
33  
S
Cies  
Coes  
Cres  
3980  
170  
60  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
177  
30  
nC  
nC  
nC  
Qge  
Qgc  
IC = 36A, VGE = 15V, VCE = 1000V  
80  
e
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
115  
580  
430  
880  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
Resistive Switching Times, TJ = 25°C  
IC = 36A, VGE = 15V  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 1250V, RG = 20Ω  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
105  
830  
480  
900  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 36A, VGE = 15V  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
VCE = 1250V, RG = 20Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
RthJC  
RthCS  
0.21 °C/W  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
TO-247  
TO-264  
0.21  
0.15  
°C/W  
°C/W  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode  
TO-264 (IXCK) Outline  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
trr  
IF = 36A, VGE = 0V, Note 1  
IF = 23A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
2.5  
V
μs  
A
1.7  
43  
IRM  
Note:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
3
=
Additional provisions for lead to lead voltage isolation are required at VCE > 1200V.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXCH36N250  
IXCK36N250  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 25V  
VGE = 25V  
19V  
15V  
13V  
21V  
17V  
15V  
11V  
9V  
13V  
11V  
9V  
7V  
60  
7V  
30  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
-50  
5
5
10  
15  
20  
25  
150  
10.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 25V  
19V  
11V  
9V  
VGE = 15V  
15V  
13V  
I C = 72A  
I C = 36A  
7V  
5V  
I C = 18A  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
120  
100  
80  
60  
40  
20  
0
TJ = 25ºC  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
I C = 72A  
36A  
TJ = 125ºC  
25ºC  
- 40ºC  
18A  
9
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
10  
7
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXCH36N250  
IXCK36N250  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
140  
120  
100  
80  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 25ºC  
25ºC  
TJ = 125ºC  
125ºC  
60  
40  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
0
20  
40  
60  
80  
100  
120  
140  
VF - Volts  
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
16  
14  
12  
10  
8
10,000  
1,000  
100  
VCE = 1000V  
I
I
C = 36A  
C
ies  
G = 10mA  
C
oes  
6
4
C
res  
2
= 1 MHz  
f
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
160  
140  
120  
100  
80  
0.1  
0.01  
60  
0.001  
40  
TJ = 125ºC  
G = 20Ω  
dv / dt < 10V / ns  
R
20  
0.0001  
0
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
Pulse Width - Seconds  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXCH36N250  
IXCK36N250  
Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC  
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
1
1
10ms  
10ms  
0.1  
0.01  
0.1  
0.01  
100ms  
T
T
= 150ºC  
= 25ºC  
T
T
= 150ºC  
= 75ºC  
J
J
100ms  
DC  
C
C
DC  
Single Pulse  
Single Pulse  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
VCE - Volts  
VCE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: C_36N250(8M)8-24-11  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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