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IXCP01M90S

型号:

IXCP01M90S

描述:

模拟IC\n[ Analog IC ]

品牌:

ETC[ ETC ]

页数:

2 页

PDF大小:

94 K

SwitchableCurrent  
Regulators  
IXCP01M90S  
IXCY01M90S  
VAK = 900 V  
IA(P) = 1 - 100 mA  
RDYN = 100 kΩ  
Symbol  
TestCondition  
Maximum Ratings  
TO-220 AB  
(IXCP)  
VAKR  
VAGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C  
900  
900  
V
V
A
G
A
K
VGK  
ID  
20  
-0.3  
25  
V
A
TC = 25°C  
TC = 25°C  
TO-252 AA  
(IXCY)  
A
PD  
W
G
K
T
-55 ... +150  
-55 ... +150  
260  
°C  
°C  
°C  
TJ  
TLstg  
Temperature for Soldering (max. 10 s)  
Pinconnections  
1 = G, Control terminal;  
MD  
Mounting torque with screw M3 (TO-220)  
with screw M3.5 (TO-220)  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
2 and 4 = A (+) Positive terminal  
3 = K (-), Negative terminal  
Features  
Symbol  
TestCondition  
Characteristic Values  
Minimum of 900 V breakdown  
(TJ = 25°C unless otherwise specified)  
Resistor programmable current  
source  
min.  
900  
7
typ.  
max.  
25 W continuous dissipation  
VAKR  
IA(P)  
RK = 300 Ω, (Fig. 1)  
V
International standard packages  
JEDEC TO-220 and TO-252  
VD = 10 V; RK = 300 Ω; (Fig. 2)  
9
15 mA  
V
On/Off switchable current source  
VGK(off)  
ID = 100 µA; VD = 900 V  
-5  
Applications  
Fig. 4  
Highly stable voltage sources  
Current surge limiters  
Transient voltage protection  
Instantaneously reacting resetable  
fuses  
ID(P)  
VD= 720 V; VGK = -10 V  
(Fig. 1)  
25  
µA  
kΩ  
VAK/IA(P)  
Dynamic resistance; VD= 10 V  
100  
RK = 300 Ω; (Fig. 1)  
Soft start-up circuits  
RthJC  
RthJA  
Thermal Resistance junction-to-case  
5
K/W  
Thermal Resistance junction-to-ambient TO-220  
TO-252  
80 K/W  
100 K/W  
98729A (07/00)  
© 2000 IXYS All rights reserved  
IXCP01M90S  
IXCY10M90S  
TO-220 AB Outline  
ID(p)  
A (+)  
G
VD  
K
(-)  
RK  
Fig. 1 Resistor R in series with negative pin  
to achieve Kdifferent current levels  
100  
o
o
T
= 25 C  
T
= 125 C  
J
J
10  
TO-252 AA Outline  
1
10  
100  
1000  
10000  
Series Resistor RK - Ohms  
Fig. 2. Plateau current versus external resistance  
IA(P)  
A (+)  
VD  
G
VGK  
K
(-)  
PackageMarking:  
Y01M90S  
Fig. 3. Current regulator controlled by VG  
100  
Dim.  
Millimeter  
Inches  
Min. Max. Min.  
Max.  
A
2.19 2.38 0.086 0.094  
0.89 1.14 0.035 0.045  
A1  
o
T
= 25 C  
J
A2  
0
0.13  
0
0.005  
b
0.64 0.89 0.025 0.035  
b1  
b2  
0.76 1.14 0.030 0.045  
o
T
= 125 C  
5.21 5.46 0.205 0.215  
J
10  
c
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
c1  
D
5.97 6.22 0.235 0.245  
D1 4.32 5.21 0.170 0.205  
E
6.35 6.73 0.250 0.265  
E1  
4.32 5.21 0.170 0.205  
e
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
e1  
1
-3.5  
H
9.40 10.42 0.370 0.410  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
L
0.51 1.02 0.020 0.040  
Gate-Source V  
- Volts  
Fig. 4. Plateau current versusGaKpplied input voltage  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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