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IXTH3N150

型号：

IXTH3N150

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

152 K

下载PDF手册
High Voltage  
Power MOSFET  
VDSS = 1500V  
ID25 = 3A  
RDS(on) 7.3  
IXTH3N150  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1500  
1500  
V
V
VDGR  
G
D
Tab  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
G = Gate  
S = Source  
D
= Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
3
9
A
A
Tab = Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
3
250  
A
mJ  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
5
V/ns  
W
International Standard Package  
Fast Intrinsic Diode  
250  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Avalanche Rated  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
g
Easy to Mount  
Space Savings  
Weight  
6
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
100 nA  
IDSS  
10 A  
TJ = 125C  
100 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
7.3  
DS100286C(10/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTH3N150  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
2.2  
3.6  
S
Ciss  
Coss  
Crss  
1375  
90  
pF  
pF  
pF  
30  
RGI  
3.0  
  
td(on)  
tr  
td(off)  
tf  
19  
21  
42  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5(External)  
1 - Gate  
2,4 - Drain  
3 - Source  
Qg(on)  
Qgs  
38.6  
6.5  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
19.0  
RthJC  
RthCS  
0.50 C/W  
C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
3
A
A
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
12  
1.3  
V
trr  
QRM  
IRM  
0.9  
6.7  
15  
s  
IF = 1.5A, -di/dt = 100A/μs  
C  
VR = 100V  
A
Note:  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTH3N150  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Output Characteristics @ TJ = 125ºC  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
6V  
5.5V  
5V  
5V  
4V  
4V  
0
4
8
12  
16  
20  
24  
28  
32  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.  
Drain Current  
Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs.  
Junction Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
V
= 10V  
GS  
T
J
= 125ºC  
I
= 3A  
D
I
= 1.5A  
D
T
J
= 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
= 125ºC  
J
25ºC  
- 40ºC  
3.2  
3.6  
4.0  
4.4  
4.8  
5.2  
5.6  
6.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS - Volts  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTH3N150  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
VSD - Volts  
ID - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10,000  
1,000  
100  
10  
V
= 750V  
DS  
= 1 MHz  
f
I
I
= 1.5A  
D
G
8
6
4
2
0
C
iss  
= 10mA  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Maximum Transient Thermal Impedance  
Fig. 12. Forward-Bias Safe Operating Area  
10  
1
R
DS(on)  
Limit  
25µs  
100µs  
1
1ms  
0.1  
10ms  
0.1  
0.01  
100ms  
DC  
T = 150ºC  
J
T
C
= 25ºC  
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
10  
100  
1,000  
10,000  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_3N150(4N)10-26-10-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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