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IXTQ48N20T

型号：

IXTQ48N20T

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

187 K

下载PDF手册
TrenchTM  
Power MOSFET  
IXTA48N20T  
IXTP48N20T  
IXTQ48N20T  
VDSS  
ID25  
= 200V  
= 48A  
RDS(on) ≤ 50mΩ  
TO-263 AA (IXTA)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
TO-220AB (IXTP)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
200  
200  
V
V
VGSM  
Transient  
± 30  
V
G
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
48  
130  
A
A
D
D (Tab)  
S
TO-3P (IXTQ)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
A
500  
mJ  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
3
V/ns  
W
G
D
250  
S
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
D (Tab)  
= Drain  
G = Gate  
D
S = Source  
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
FC  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-3P)  
10..65/2.2..14.6  
1.13/10  
Nm/lb.in  
Nm/lb.in  
Md  
z High Current Handling Capability  
z Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
g
g
g
z Fast Intrinsic Rectifier  
z
Low RDS(on)  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
200  
2.5  
Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
4.5  
Applications  
± 100 nA  
μA  
IDSS  
5
z DC-DC Converters  
z Battery Chargers  
TJ = 150°C  
250 μA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
40  
50 mΩ  
z DC Choppers  
z AC Motor Drives  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS99948A(02/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA48N20T IXTP48N20T  
IXTQ48N20T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-220 (IXTP) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
26  
44  
S
Ciss  
Coss  
Crss  
3090  
350  
40  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
20  
26  
46  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω(External)  
Qg(on)  
Qgs  
60  
18  
13  
nC  
nC  
nC  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
0.50 °C/W  
RthCS  
RthCS  
TO-220  
TO-3P  
0.50  
0.25  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
48  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 48A, VGS = 0V, Note 1  
192  
1.2  
TO-3P (IXTQ) Outline  
trr  
130  
8.5  
ns  
A
IF = 0.5 • ID25, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 0.5 • VDSS  
550  
nC  
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 (IXTA) Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
14.61  
2.29  
1.02  
1.27  
0
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA48N20T IXTP48N20T  
IXTQ48N20T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
6V  
60  
40  
20  
5V  
5V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 24A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
8V  
7V  
I D = 48A  
6V  
5V  
I D = 24A  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 24A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 175ºC  
TJ = 25ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
ID - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA48N20T IXTP48N20T  
IXTQ48N20T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS =100V  
I
I
D = 24A  
G = 10mA  
60  
TJ = 150ºC  
40  
TJ = 25ºC  
20  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
10,000  
1,000  
100  
C
iss  
C
oss  
C
rss  
= 1 MHz  
5
f
10  
0
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA48N20T IXTP48N20T  
IXTQ48N20T  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
32  
28  
24  
20  
16  
12  
8
34  
30  
26  
22  
18  
14  
10  
6
RG = 5Ω , VGS = 15V  
VDS = 100V  
RG = 5ꢀ , VGS = 15V  
VDS = 100V  
TJ = 25ºC  
I D = 48A  
I D = 24A  
TJ = 125ºC  
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
38  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
42  
22  
22  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
tf  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
20  
18  
16  
14  
12  
10  
21  
20  
19  
18  
17  
16  
RG = 5ꢀ, VGS = 15V  
TJ = 125ºC, VGS = 15V  
VDS = 100V  
VDS = 100V  
I D = 48A  
I D = 24A  
I D = 24A  
I D = 48A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
32  
30  
28  
26  
24  
22  
20  
18  
68  
66  
58  
50  
42  
34  
26  
18  
160  
140  
120  
100  
80  
tf  
t
d(off) - - - -  
t f  
t
d(off) - - - -  
RG = 5ꢀ, VGS = 15V  
64  
60  
56  
52  
48  
44  
40  
TJ = 125ºC, VGS = 15V  
VDS = 100V  
VDS = 100V  
TJ = 25ºC  
I D = 24A  
TJ = 125ºC  
I D = 48A  
TJ = 125ºC  
60  
TJ = 25ºC  
40  
10  
15  
20  
25  
30  
35  
40  
45  
50  
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_48N20T(4W)02-12-10-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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