IXTC 62N15P
IXTR 62N15P
Symbol
gfs
Test Conditions
Characteristic Values
ISOPLUS220TM (IXTC) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
VDS= 20 V; ID = 31 A, Note 1
14
24
S
Ciss
Coss
Crss
2250
660
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
185
td(on)
tr
td(off)
tf
27
38
76
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 62 A
RG = 10 Ω (External)
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Qg(on)
Qgs
70
20
38
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 31 A
Qgd
RthJC
RthCS
1.0 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25° C unless otherwise specified)
Symbol
IS
Test Conditions
Min. Typ.
Max.
VGS = 0 V
62
A
A
V
Ref: IXYS CO 0177 R0
ISM
Repetitive
150
1.5
ISOPLUS247 (IXTR) Outline
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 25 A, -di/dt = 100 A/µs
150
2.0
ns
QRM
VR = 100 V, VGS = 0 V
µC
Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2: Test current I IT = 62 A.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6771478 B2
7,005,734B2
