Advance Technical Information
IXTK 120N25
VDSS = 250 V
ID25 = 120 A
RDS(on) = 22 mΩ
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Symbol
Testconditions
Maximum ratings
TO-264AA(IXTK)
VDSS
VDGR
TJ = 25°C to 150°C
250
250
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
VGS
Continuous
Transient
20
30
V
V
VGSM
D (TAB)
G
ID25
ID(RMS)
IDM
TC = 25°C MOSFET chip capability
External leadcurrentlimit
TC = 25°C, pulse width limited by TJM
TC = 25°C
120
75
480
90
A
D
S
A
A
A
IAR
G = Gate
S = Source
D = Drain
Tab = Drain
EAR
EAS
TC = 25°C
TC = 25°C
64
3.
mJ
0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TJ
TC = 25°C
560
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
TL
1.6 mm (0.063 in.) from case for 10 s
Mountingtorque
300
0.7/6
10
°C
Nm/lb.in.
g
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• Internationalstandardpackage
• Fastswitchingtimes
Md
Weight
TO-264
Applications
Symbol Test Conditions
Characteristic Values
• Motorcontrols
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
• DC choppers
• Switched-mode power supplies
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
250
2.
V
Advantages
VDS = VGS, ID = 250 µA
VGS = 20 V DC, VDS = 0
0
4.
0
V
200 nA
• Easy to mount with one screw
(isolatedmountingscrewhole)
• Space savings
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
3
mA
• High power density
RDS(on)
VGS = 10 V, I = 0.5 ID25
22 mΩ
Pulse test, t ≤D300 ms, duty cycle d ≤ 2%
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98879A (02/02)
