IXTH1N200P3 IXTA1N200P3HV
IXTH1N200P3HV
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
D
A
A2
A
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
B
E
Q
gfs
VDS = 50V, ID = 0.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.4
0.7
S
S
D2
P1
R
D1
D
Ciss
Coss
Crss
646
50
pF
pF
pF
4
1
2
3
L1
C
17
E1
L
td(on)
tr
td(off)
tf
16
26
37
80
ns
ns
ns
ns
Resistive Switching Times
A1
b
b2
C
V
GS = 10V, VDS = 1kV, ID = 0.5 • ID25
1 - Gate
2,4 - Drain
3 - Source
b4
e
RG = 5 (External)
Qg(on)
Qgs
23.5
3.1
nC
nC
nC
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Qgd
13.3
RthJC
RthCS
1.0 C/W
C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
1
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
4
TO-247HV Outline
E
A
E1
1.5
V
R
0P
A2
0P1
Q
S
IF = 1A, -di/dt = 100A/μs, VR = 100V
2.3
μs
D1
D2
D
4
1
2
3
L1
L
A3
2X
D3
E2
E3
4X
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
A1
e
b
b1
c
e1
3X
3X
PINS:
1 - Gate 2 - Source
3, 4 - Drain
TO-263HV Outline
E
A
L1
C2
D1
D
H
3
E1
1
2
A1
L4
L
L3
GAUGE
PLANE
b2
b
e2
e1
C
PIN: 1 - Gate
08
2 - Source
3 - Drain
A2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
