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5N60-A-TN3-R

型号：

5N60-A-TN3-R

品牌：

UTC[ Unisonic Technologies ]

页数：

6 页

PDF大小：

205 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
5N60  
Power MOSFET  
4.5 Amps, 600/650 Volts  
N-CHANNEL MOSFET  
„
DESCRIPTION  
The UTC 5N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged avalanche  
characteristics. This power MOSFET is usually used at high speed  
switching applications in power supplies, PWM motor controls, high  
efficient DC to DC converters and bridge circuits.  
„
FEATURES  
* RDS(ON) = 2.5Ω @VGS = 10 V  
* Ultra low gate charge ( typical 15 nC )  
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )  
* Fast switching capability  
Lead-free:  
Halogen-free: 5N60G  
5N60L  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
5N60G-x-TA3-T  
5N60G-x-TF3-T  
5N60G-x-TN3-R  
5N60G-x-TN3-T  
1
2
3
5N60-x-TA3-T  
5N60-x-TF3-T  
5N60-x-TN3-R  
5N60-x-TN3-T  
5N60L-x-TA3-T  
5N60L-x-TF3-T  
5N60L-x-TN3-R  
5N60L-x-TN3-T  
TO-220  
TO-220F  
TO-252  
TO-252  
G
G
G
G
D
D
D
D
S
S
S
S
Tube  
Tube  
Tape Reel  
Tube  
5N60L-x-TA3-T  
(1)Packing Type  
(1) R: Tape Reel, T: Tube  
(2)Package Type  
(2) TA3: TO-220, TF3: TO-220F, TN3: TO-252  
(3)Drain-Source Voltage  
(4)Lead Plating  
(3) A: 600V, B: 650V  
(4) G: Halogen Free, L: Lead Free,  
Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-065,D  
5N60  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC = 25℃ unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
5N60-A  
5N60-B  
600  
650  
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
VGSS  
IAR  
±30  
V
A
A
A
Avalanche Current (Note 2)  
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
4.5  
ID  
4.5  
IDM  
18  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
EAS  
EAR  
dv/dt  
210  
Avalanche Energy  
mJ  
10  
Peak Diode Recovery dv/dt (Note 4)  
4.5  
V/ns  
TO-220  
TO-220F  
TO-252  
100  
Power Dissipation  
PD  
W
33  
54  
Junction Temperature  
Operation Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
-55 ~ +150  
℃
℃
℃
TOPR  
TSTG  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Pulse width limited by TJ(MAX)  
3. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃  
4. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25℃  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
62.5  
83  
UNIT  
°C/W  
TO-220  
TO-220F  
TO-252  
TO-220  
TO-220F  
TO-252  
Junction-to-Ambient  
Junction-to-Case  
θJA  
1.25  
3.79  
2.3  
θJC  
°C/W  
„
ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
5N60-A  
5N60-B  
VGS =0V, ID = 250μA  
GS =0V, ID = 250μA  
600  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
BVDSS  
IDSS  
V
V
650  
VDS =600V, VGS = 0V  
VGS =30V, VDS = 0V  
VGS =-30V, VDS = 0V  
1
μA  
Forward  
Reverse  
100  
-100  
IGSS  
nA  
Breakdown Voltage Temperature  
Coefficient  
△BVDSS/△TJ  
ID =250μA, Referenced to 25℃  
0.6  
V/℃  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS =VGS, ID = 250μA  
2.0  
4.0  
V
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS =10V, ID = 2.25A  
2.0 2.5  
Ω
CISS  
COSS  
CRSS  
515 670 pF  
55 72 pF  
VDS = 25V, VGS = 0V,  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
6.5 8.5 pF  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
www.unisonic.com.tw  
QW-R502-065,D  
5N60  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS(Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
Turn-On Rise Time  
tD(ON)  
tR  
tD(OFF)  
tF  
10  
42  
38  
30  
90  
85  
ns  
ns  
ns  
VDD = 300V, ID =4.5 A,  
RG = 25Ω (Note 1, 2)  
Turn-Off Delay Time  
Turn-Off Fall Time  
46 100 ns  
Total Gate Charge  
QG  
15  
2.5  
6.6  
19  
nC  
nC  
nC  
V
V
DS = 480 V, ID = 4.5A,  
GS = 10 V (Note 1, 2)  
Gate-Source Charge  
Gate-Drain Charge  
QGS  
QGD  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0 V, IS = 4.5 A  
1.4  
4.5  
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
18  
A
Reverse Recovery Time  
tRR  
V
GS = 0 V, IS = 4.5 A,  
300  
2.2  
ns  
dIF / dt = 100 A/μs (Note 1)  
Reverse Recovery Charge  
QRR  
μC  
Note 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
www.unisonic.com.tw  
QW-R502-065,D  
5N60  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R502-065,D  
www.unisonic.com.tw  
5N60  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
BVDSS  
IAS  
RD  
VDD  
ID(t)  
VDS(t)  
VDD  
10V  
D.U.T.  
tp  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
www.unisonic.com.tw  
QW-R502-065,D  
5N60  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
On-Resistance Variation vs. Drain Current  
and Gate Voltage  
Maximum Safe Operating Area  
6
5
4
3
2
Operation in This Area  
is Limited by RDS(on)  
100sµ  
101  
100  
10-1  
1ms  
10ms  
VGS=10V  
VGS=20V  
DC  
*Notes:  
1. TC=25℃  
2. TJ=150℃  
3. Single Pulse  
1
0
*Note: TJ=25℃  
10-2  
100  
101  
102  
103  
0
2
4
6
8
10  
Drain Current, ID (A)  
Drain-Source Voltage, VDS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R502-065,D  
www.unisonic.com.tw  
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