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5N60-TF3-T

型号：

5N60-TF3-T

描述：

4.5安培， 600伏特N沟道MOSFET[ 4.5 Amps, 600 Volts N-CHANNEL MOSFET ]

品牌：

UTC[ Unisonic Technologies ]

页数：

6 页

PDF大小：

152 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
5N60  
Power MOSFET  
4.5 Amps, 600 Volts  
N-CHANNEL MOSFET  
1
ꢀ
DESCRIPTION  
TO-220  
The UTC 5N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged avalanche  
characteristics. This power MOSFET is usually used at high speed  
switching applications in power supplies, PWM motor controls, high  
efficient DC to DC converters and bridge circuits.  
1
TO-220F  
ꢀ
FEATURES  
*Pb-free plating product number: 5N60L  
* RDS(ON) = 2.5Ω @VGS = 10 V  
* Ultra low gate charge ( typical 15 nC )  
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )  
* Fast switching capability  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
ꢀ
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ꢀ
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
2
D
D
3
S
S
5N60-TA3-T  
5N60-TF3-T  
5N60L-TA3-T  
5N60L-TF3-T  
TO-220  
G
G
Tube  
Tube  
TO-220F  
5N60L-TA3-T  
(1)Packing Type  
(1) T: Tube  
(2)Package Type  
(3)Lead Plating  
(2) TA3: TO-220, TF3: TO-220F  
(3) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-065,B  
5N60  
Power MOSFET  
ꢀ
ABSOLUTE MAXIMUM RATING (TC = 25℃ unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
600  
±30  
VGSS  
V
Avalanche Current (Note 1)  
IAR  
4.5  
A
TC = 25℃  
4.5  
A
Continuous Drain Current  
ID  
TC = 100℃  
2.6  
A
Pulsed Drain Current (Note 1)  
IDM  
EAS  
18  
A
Avalanche Energy, Single Pulsed (Note 2)  
Avalanche Energy, Repetitive Limited by TJ(MAX)  
Peak Diode Recovery dv/dt (Note 3)  
210  
mJ  
mJ  
V/ns  
W
EAR  
10  
dv/dt  
4.5  
TC = 25℃  
100  
Power Dissipation  
PD  
Derate above 25℃  
0.8  
W/℃  
℃
Junction Temperature  
TJ  
+150  
-55 ~ +150  
Operating and Storage Temperature  
TSTG  
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ꢀ
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
°C/W  
Junction-to-Ambient  
Junction-to-Case  
Case-to-Sink  
θJC  
1.25  
θCS  
0.5  
ꢀ
ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Off Characteristics  
Drain-Source Breakdown Voltage  
BVDSS VGS =0V, ID = 250µA  
600  
V
VDS =600V, VGS = 0V  
IDSS  
1
µA  
µA  
Drain-Source Leakage Current  
VDS =480V, TC = 125℃  
10  
△BVDSS/△  
Breakdown Voltage Temperature  
Coefficient  
ID =250µA, Referenced to 25℃  
0.6  
V/℃  
TJ  
Forward  
Reverse  
VGS =30V, VDS = 0V  
IGSS  
100 nA  
-100 nA  
Gate-Body Leakage Current  
V
GS =-30V, VDS = 0V  
On Characteristics  
Gate Threshold Voltage  
Static Drain-Source On-Resistance  
Forward Transconductance  
Dynamic Characteristics  
Input Capacitance  
VGS(TH) VDS =VGS, ID = 250µA  
RDS(ON) VGS =10V, ID = 2.25A  
2.0  
4.0  
V
Ω
S
2.0 2.5  
4.7  
gFS  
VDS =40V, ID = 2.25A (Note 4)  
CISS  
COSS  
CRSS  
515 670 pF  
V
DS = 25V, VGS = 0V,  
Output Capacitance  
55  
72  
pF  
pF  
f = 1.0MHz  
Reverse Transfer Capacitance  
Switching Characteristics  
6.5 8.5  
Delay Time  
Rise Time  
Delay Time  
Fall Time  
tD(ON)  
tR  
tD(OFF)  
tF  
10  
42  
38  
30  
90  
85  
ns  
ns  
Turn-On  
Turn-Off  
VDD = 300V, ID =4.5 A,  
RG = 25Ω (Note 4, 5)  
ns  
46 100  
ns  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
QG  
15  
2.5  
6.6  
19  
nC  
nC  
nC  
V
V
DS = 480 V, ID = 4.5A,  
GS = 10 V (Note 4, 5)  
QGS  
QGD  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R502-065,B  
www.unisonic.com.tw  
5N60  
Power MOSFET  
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Drain-Source Diode Characteristics and Maximum Ratings  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
IS  
VGS = 0 V, IS = 4.5 A  
1.4  
4.5  
V
A
Maximum Pulsed Drain-Source Diode Forward  
Current  
ISM  
18  
A
Reverse Recovery Time  
tRR  
V
GS = 0 V, IS = 4.5 A,  
300  
2.2  
ns  
dIF / dt = 100 A/µs (Note 4)  
Reverse Recovery Charge  
QRR  
µC  
Note 1. Repetitive Rating : Pulse width limited by TJ  
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃  
3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃  
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%  
5. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R502-065,B  
www.unisonic.com.tw  
5N60  
Power MOSFET  
ꢀ
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
VGS  
(Driver)  
Period  
D=  
P.W.  
Period  
10V  
VGS=  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
(D.U.T.)  
VDD  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R502-065,B  
www.unisonic.com.tw  
5N60  
Power MOSFET  
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDS  
90%  
VDD  
VGS  
RG  
10%  
VGS  
D.U.T.  
10V  
tD(ON )  
tD(OFF)  
Pulse Width ≤ 1μs  
Duty Factor ≤0.1%  
tF  
tR  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
Same Type  
as D.U.T.  
50kΩ  
QG  
12V  
10V  
0.3μF  
0.2μF  
VDS  
QGS  
QGD  
VGS  
DUT  
VG  
3mA  
Charge  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
L
VDS  
BVDSS  
RD  
VDD  
10V  
D.U.T.  
tp  
IAS  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R502-065,B  
www.unisonic.com.tw  
5N60  
Power MOSFET  
ꢀ
TYPICAL CHARACTERISTICS  
Transfer Characteristics  
On-Region Characteristics  
V
GS  
Top:  
Bottorm :4.5V  
5.0V  
101  
101  
100  
10-1  
5V  
100  
25℃  
10-1  
*Notes:  
*Notes:  
4.5V  
1. 250µs Pulse Test  
1. VDS=40V  
2. TC=25℃  
2.250µs Pulse Test  
10-2  
10-1  
100  
101  
2
4
6
8
10  
Gate-Source Voltage, VGS (V)  
Drain-Source Voltage VDS (V)  
,
On-Resistance Variation vs. Drain Current  
and Gate Voltage  
Maximum Safe Operating Area  
Operation in This Area  
6
5
4
3
2
100sµ  
is Limited by R  
DS(on)  
101  
100  
10-1  
1ms  
VGS=10V  
VGS=20V  
1
0
0
10ms  
m
s
DC  
*Notes:  
1. TC=25℃  
2. TJ=150℃  
1
3. Single Pulse  
*Note: TJ=25℃  
10-2  
0
0
100  
101  
102  
103  
2
4
6
8
10  
Drain Current, ID (A)  
Drain-Source Voltage, VDS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R502-065,B  
www.unisonic.com.tw  
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